- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377563 > IS61LV12816 (Integrated Silicon Solution, Inc.) 128K x 16 High-Speed CMOS Static RAM(3.3V,128K x 16 高速CMOS靜態(tài)RAM) PDF資料下載
參數(shù)資料
| 型號(hào)： | IS61LV12816 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 128K x 16 High-Speed CMOS Static RAM(3.3V,128K x 16 高速CMOS靜態(tài)RAM) |
| 中文描述： | 128K的× 16高速CMOS靜態(tài)RAM（3.3，128K的× 16高速的CMOS靜態(tài)RAM）的 |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | IS61LV12816 |
IS61LV12816
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. A
11/30/00
3
ISSI
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0
°
C to + 70
°
C
–
40
°
C to + 85
°
C
V
CC
3.3V ± 10%
3.3V ± 10%
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
=
–
4.0 mA
2.4
—
V
V
OL
Output LOW Voltage
Input HIGH Voltage
(1)
Input LOW Voltage
(1)
V
CC
= Min., I
OL
= 8.0 mA
—
0.4
V
V
IH
2
V
CC
+ 0.3
V
V
IL
–
0.3
0.8
V
I
LI
Input Leakage
GND - V
IN
- V
CC
–
1
1
μA
I
LO
Output Leakage
GND - V
OUT
- V
CC
, Outputs Disabled
–
1
1
μA
Note:
1. V
IL
(min.) =
–
0.3V DC; V
IL
(min.) =
–
2.0V AC (pulse width - 2.0 ns).
V
IH
(max.) = V
CC
+ 0.3V DC; V
IH
(max.) = V
CC
+ 2.0V AC (pulse width - 2.0 ns).
PIN DESCRIPTIONS
A0-A16
Address Inputs
I/O0-I/O15
Data Inputs/Outputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
LB
Lower-byte Control (I/O0-I/O7)
UB
Upper-byte Control (I/O8-I/O15)
NC
No Connection
Vcc
Power
GND
Ground
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
CC
V
TERM
T
STG
T
BIAS
Parameter
Power Supply Voltage Relative to GND
Terminal Voltage with Respect to GND
Storage Temperature
Temperature Under Bias:
Value
–
0.5 to 5.0
–
0.5 to Vcc + 0.5
–
65 to + 150
–
10 to + 85
–
45 to + 90
2.0
±20
Unit
V
V
°
C
°
C
°
C
W
mA
Com.
Ind.
P
T
I
OUT
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Power Dissipation
DC Output Current
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LV12824 | 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12824-10B | 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12824-10BI | 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12824-10BL | 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12824-10TQ | 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV12816-10B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12816-10BI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12816-10K | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12816-10KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12816-10LQ | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。