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參數(shù)資料
| 型號(hào)： | IS61LV12816 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 128K x 16 High-Speed CMOS Static RAM(3.3V,128K x 16 高速CMOS靜態(tài)RAM) |
| 中文描述： | 128K的× 16高速CMOS靜態(tài)RAM（3.3，128K的× 16高速的CMOS靜態(tài)RAM）的 |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | IS61LV12816 |
IS61LV12816
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. A
11/30/00
7
ISSI
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
-8 ns
-10 ns
Min.
-12 ns
Min.
-15 ns
Min.
Symbol
t
WC
t
SCE
t
AW
Parameter
Min.
Max
Max.
Max.
Max.
Unit
Write Cycle Time
8
—
10
—
12
—
15
—
ns
CE
to Write End
6.5
—
8
—
8
—
10
—
ns
Address Setup Time
to Write End
6.5
—
8
—
8
—
10
—
ns
t
HA
t
SA
t
PWB
t
PWE
1
t
PWE
2
t
SD
t
HD
t
HZWE
(3)
t
LZWE
(3)
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V
to 3.0V and output loading specified in Figure 1.
2. The internal write time is defined by the overlap of
CE
LOW and
UB
or
LB
, and
WE
LOW. All signals must be in valid
states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing
are referenced to the rising or falling edge of the signal that terminates the write.
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
Address Hold from Write End
0
—
0
—
0
—
0
—
ns
Address Setup Time
0
—
0
—
0
—
0
—
ns
LB
,
UB
Valid to End of Write
6.5
—
8
—
9
—
10
—
ns
WE
Pulse Width (
OE
= HIGH)
5
—
7
—
8
—
10
—
ns
WE
Pulse Width (
OE
= LOW)
6.5
—
8
—
10
—
11
—
ns
Data Setup to Write End
4
—
5
—
6
—
7
—
ns
Data Hold from Write End
0
—
0
—
0
—
0
—
ns
WE
LOW to High-Z Output
—
3
—
4
—
5
—
6
ns
WE
HIGH to Low-Z Output
0
—
0
—
0
—
0
—
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV12816-10B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12816-10BI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12816-10K | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12816-10KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12816-10LQ | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
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