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參數(shù)資料
| 型號： | IS61LV12816LL-12TI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 128K X 16 STANDARD SRAM, 12 ns, PDSO44 |
| 封裝： | PLASTIC, TSOP2-44 |
| 文件頁數(shù)： | 14/16頁 |
| 文件大?。?/td> | 112K |
| 代理商： | IS61LV12816LL-12TI |
PACKAGING INFORMATION
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
01/15/03
Copyright 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Mini Ball Grid Array
Package Code: B (48-pin)
Notes:
1. Controlling dimensions are in millimeters.
mBGA - 6mm x 8mm
MILLIMETERS
INCHES
Sym.
Min. Typ. Max.
Min. Typ. Max.
N0.
Leads
48
A
A1
A2
D
D1
E
E1
—
—
—
—
—
1.20
0.30
—
8.10
—
—
—
—
—
0.047
0.012
—
0.319
0.24
0.60
7.90
0.009
0.024
0.311
5.25 BSC
5.90
3.75 BSC
0.207 BSC
0.232
0.148 BSC
—
6.10
—
0.240
e
0.75 BSC
0.030 BSC
b
0.30
0.35
0.40
0.012 0.014 0.016
mBGA - 8mm x 10mm
MILLIMETER
INCHES
Sym.
Min. Typ.
Max.
Min. Typ. Max.
N0.
Leads
48
A
A1
A2
D
D1
E
E1
—
—
—
—
—
1.20
0.30
—
10.10
—
—
—
—
—
0.047
0.012
—
0.398
0.24
0.60
9.90
0.009
0.024
0.390
5.25 BSC
7.90
3.75 BSC
0.207 BSC
0.311
0.148 BSC
—
8.10
—
0.319
e
0.75 BSC
0.030 BSC
b
0.30
0.35
0.40
0.012 0.014 0.016
SEATING PLANE
A
A1
A2
A
B
C
D
E
F
G
H
e
e
D1
E1
E
D
φ
b (48x)
Top View
Bottom View
6 5 4 3 2 1
1 2 3 4 5 6
A
B
C
D
E
F
G
H
相關PDF資料 |
PDF描述 |
|---|---|
| IS61LV12816 | 128K x 16 High-Speed CMOS Static RAM(3.3V,128K x 16 高速CMOS靜態(tài)RAM) |
| IS61LV12824 | 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12824-10B | 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12824-10BI | 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12824-10BL | 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV12824 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12824-10B | 功能描述:靜態(tài)隨機存取存儲器 3Mb 128Kx24 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV12824-10BI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12824-10BL | 功能描述:靜態(tài)隨機存取存儲器 3Mb 128Kx24 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV12824-10BL-TR | 功能描述:靜態(tài)隨機存取存儲器 3Mb 128Kx24 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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