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參數(shù)資料
| 型號： | IS61LV12816LL-12TI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 128K X 16 STANDARD SRAM, 12 ns, PDSO44 |
| 封裝： | PLASTIC, TSOP2-44 |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 112K |
| 代理商： | IS61LV12816LL-12TI |
IS61LV12816L, IS61LV12816LL
6
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
05/28/03
ISSI
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
Figure 1.
319
5 pF
Including
jig and
scope
353
OUTPUT
3.3V
Figure 2.
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
IS61LV12816L
-8 ns
Min.
Max
IS61LV12816LL
-12 ns
Min.
-10 ns
Min.
Symbol
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
HZOE
(2)
t
LZOE
(2)
t
HZCE
(2)
t
LZCE
(2)
t
BA
t
HZB
(2)
t
LZB
(2)
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to
3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
Parameter
Max.
Max.
Unit
Read Cycle Time
8
—
10
—
12
—
ns
Address Access Time
—
8
—
10
—
12
ns
Output Hold Time
3
—
3
—
3
—
ns
CE
Access Time
—
8
—
10
—
12
ns
OE
Access Time
—
3.5
—
4
—
5
ns
OE
to High-Z Output
—
3.5
—
4
—
5
ns
OE
to Low-Z Output
0
—
0
—
0
—
ns
CE
to High-Z Output
0
3.5
0
4
0
5
ns
CE
to Low-Z Output
3.5
—
3
—
3
—
ns
LB
,
UB
Access Time
—
3.5
—
4
—
5
ns
LB
,
UB
to High-Z Output
0
3.5
0
4
0
5
ns
LB
,
UB
to Low-Z Output
0
—
0
—
0
—
ns
Z
O
= 50
1.5V
50
OUTPUT
30 pF
Including
jig and
scope
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV12824 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12824-10B | 功能描述:靜態(tài)隨機存取存儲器 3Mb 128Kx24 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV12824-10BI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV12824-10BL | 功能描述:靜態(tài)隨機存取存儲器 3Mb 128Kx24 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV12824-10BL-TR | 功能描述:靜態(tài)隨機存取存儲器 3Mb 128Kx24 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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