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參數(shù)資料
| 型號： | IS61LV12824-8TQ |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 128K X 24 STANDARD SRAM, 8 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 10/13頁 |
| 文件大小： | 77K |
| 代理商： | IS61LV12824-8TQ |
IS61LV12824
ISSI
10
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. D
06/22/05
WRITE CYCLE NO. 3
(1)
(
WE
Controlled:
OE
I
S
LOW
DURING
W
RITE
C
YLE
)
Note:
1. The internal Write time is defined by the overlap of
CE1
and
CE2
= LOW, CE2 = HIGH and
WE
= LOW. All signals must be
in valid states to initiate a Write, but any can be deasserted to terminate the Write. The Data Input Setup and Hold timing is
referenced to the rising or falling edge of the signal that terminates the Write.
DATA UNDEFINED
t
WC
VALID ADDRESS
LOW
LOW
t
PWE2
t
AW
t
HA
HIGH-Z
t
HD
t
SA
t
HZWE
ADDRESS
CE1
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
HIGH
CE2
CE2_WR3.eps
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV12824-8TQL | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61LV12824-8TQ-TR | 功能描述:靜態(tài)隨機存取存儲器 3Mb 128Kx24 8ns 3.3v Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV12824-9B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x24 SRAM |
| IS61LV12824-9BI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x24 SRAM |
| IS61LV12824-9TQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x24 SRAM |
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