- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377563 > IS61LV12824-8TQ (INTEGRATED SILICON SOLUTION INC) 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY PDF資料下載
參數(shù)資料
| 型號： | IS61LV12824-8TQ |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 128K X 24 STANDARD SRAM, 8 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 5/13頁 |
| 文件大?。?/td> | 77K |
| 代理商： | IS61LV12824-8TQ |
IS61LV12824
1
2
3
4
5
6
7
8
9
10
11
12
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. D
06/22/05
5
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-8 ns
Min.
-10 ns
Min.
Symbol
Parameter
Test Conditions
Max.
Max.
Unit
I
CC
Vcc Dynamic Operating
Supply Current
V
CC
= Max.,
I
OUT
= 0 mA, f = f
MAX
Com.
Ind.
—
—
210
240
—
—
180
210
mA
I
SB
1
TTL Standby Current
(TTL Inputs)
V
CC
= Max.,
V
IN
= V
IH
or V
IL
, f = max.
CE1
,
CE2
,
≥
V
IH
, CE2
≤
V
IL
V
CC
= Max.,
CE1
,
CE2
≥
V
CC
– 0.2V,
CE2
≤
0.2V, V
IN
≥
V
CC
– 0.2V,
or V
IN
≤
0.2V, f = 0
Com.
Ind.
—
—
70
80
—
—
50
55
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
Com.
Ind.
—
—
10
20
—
—
10
20
mA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
2 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
Figure 1
Figure 2
319
5 pF
Including
jig and
scope
353
OUTPUT
3.3V
OUTPUT
Z
O
= 50
1.5V
50
相關PDF資料 |
PDF描述 |
|---|---|
| IS61LV256-12J | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-12N | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-12T | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-15J | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-15N | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV12824-8TQL | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61LV12824-8TQ-TR | 功能描述:靜態(tài)隨機存取存儲器 3Mb 128Kx24 8ns 3.3v Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV12824-9B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x24 SRAM |
| IS61LV12824-9BI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x24 SRAM |
| IS61LV12824-9TQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x24 SRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。