參數(shù)資料
型號: IS61LV25616L-12TI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
中文描述: 256K X 16 STANDARD SRAM, 12 ns, PDSO44
封裝: TSOP2-44
文件頁數(shù): 4/11頁
文件大?。?/td> 74K
代理商: IS61LV25616L-12TI
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
06/28/02
IS61LV25616L
ISSI
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-10
-12
-15
Symbol
Parameter
Test Conditions
Min. Max.
Min. Max.
Min. Max.
Unit
I
CC
Vcc Dynamic Operating
Supply Current
V
CC
= Max.,
I
OUT
= 0 mA, f = f
MAX
Com.
Ind.
125
135
115
125
105
115
mA
I
SB
TTL Standby Current
(TTL Inputs)
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = f
MAX
.
Com.
Ind.
65
70
55
60
45
50
mA
I
SB
1
TTL Standby Current
(TTL Inputs)
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = 0
Com.
Ind.
15
20
15
20
15
20
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
V
CC
= Max.,
CE
V
CC
– 0.2V,
V
IN
V
CC
– 0.2V, or
V
IN
0.2V, f = 0
Com.
Ind.
5
5
5
10
mA
10
10
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Shaded area product in development
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
= –4.0 mA
2.4
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 8.0 mA
0.4
V
V
IH
Input HIGH Voltage
Input LOW Voltage
(1)
2.0
V
CC
+ 0.3
V
V
IL
–0.3
0.8
V
I
LI
Input Leakage
GND
V
IN
V
CC
Com.
Ind.
–1
–5
1
5
μA
I
LO
Output Leakage
GND
V
OUT
V
CC
, 4
Outputs Disabled
Com.
Ind.
–1
–5
1
5
μA
Notes:
1. V
IL
(min.) = –2.0V for pulse width less than 10 ns.
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