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參數(shù)資料
| 型號： | IS61LV25616L-12TI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 256K X 16 STANDARD SRAM, 12 ns, PDSO44 |
| 封裝： | TSOP2-44 |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 74K |
| 代理商： | IS61LV25616L-12TI |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
06/28/02
7
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4
5
6
7
8
9
10
11
12
IS61LV25616L
ISSI
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
-10
-12
-15
Symbol
t
WC
t
SCE
t
AW
Parameter
Min. Max.
Min. Max.
Min. Max.
Unit
Write Cycle Time
10
—
12
—
15
—
ns
CE
to Write End
8
—
8
—
10
—
ns
Address Setup Time
to Write End
8
—
8
—
10
—
ns
t
HA
t
SA
t
PWB
t
PWE
1
t
PWE
2
t
SD
t
HD
t
HZWE
(2)
t
LZWE
(2)
Address Hold from Write End
0
—
0
—
0
—
ns
Address Setup Time
0
—
0
—
0
—
ns
LB
,
UB
Valid to End of Write
8
—
8
—
10
—
ns
WE
Pulse Width
8
—
8
—
10
—
ns
WE
Pulse Width (
OE
= LOW)
10
—
12
—
12
—
ns
Data Setup to Write End
6
—
6
—
7
—
ns
Data Hold from Write End
0
—
0
—
0
—
ns
WE
LOW to High-Z Output
—
5
—
6
—
7
ns
WE
HIGH to Low-Z Output
2
—
2
—
2
—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE
LOW and
UB
or
LB
, and
WE
LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the write.
Shaded area product in development
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV25616L-15K | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616L-15KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616L-15T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV256-20J | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K X 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-20JI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K X 8 LOW VOLTAGE CMOS STATIC RAM |
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