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參數(shù)資料
| 型號： | IS61LV25616L-12TI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 256K X 16 STANDARD SRAM, 12 ns, PDSO44 |
| 封裝： | TSOP2-44 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 74K |
| 代理商： | IS61LV25616L-12TI |
8
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
06/28/02
IS61LV25616L
ISSI
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the
CE
and
WE
inputs and at least one of
the
LB
and
UB
inputs being in the LOW state.
2. WRITE = (
CE
)
[
(
LB
) = (
UB
)
]
(
WE
).
AC WAVEFORMS
WRITE CYCLE NO. 1
(
CE
Controlled,
OE
is HIGH or LOW)
(1 )
DATA UNDEFINED
t
WC
VALID ADDRESS
t
SCE
t
PWE1
t
PWE2
t
AW
t
HA
HIGH-Z
t
PBW
t
HD
t
SA
t
HZWE
ADDRESS
CE
UB, LB
WE
D
OUT
D
IN
DATA
IN
VALID
t
LZWE
t
SD
UB_CEWR1.eps
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| IS61LV25616L-15K | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616L-15KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV25616L-15T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
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