- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377564 > IS61LV2568L-10T (INTEGRATED SILICON SOLUTION INC) 256K x 8 HIGH-SPEED CMOS STATIC RAM PDF資料下載
參數(shù)資料
| 型號： | IS61LV2568L-10T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 256K X 8 STANDARD SRAM, 10 ns, PDSO44 |
| 封裝： | PLASTIC, TSOP2-44 |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 82K |
| 代理商： | IS61LV2568L-10T |
IS61LV2568L
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
07/25/05
3
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
DD
V
TERM
T
STG
P
D
Parameter
Supply voltage with Respect to GND
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
Value
–0.5 to +4.0
–0.5 to V
DD
+ 0.5
–65 to +150
1.0
Unit
V
V
°C
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
TRUTH TABLE
Mode
WE
CE
OE
I/O Operation
V
DD
Current
Not Selected
(Power-down)
Output Disabled
Read
Write
X
H
X
High-Z
I
SB
1
, I
SB
2
H
H
L
L
L
L
H
L
X
High-Z
D
OUT
D
IN
I
CC
I
CC
I
CC
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
DD
= Min., I
OH
= –4.0 mA
2.4
—
V
V
OL
Output LOW Voltage
V
DD
= Min., I
OL
= 8.0 mA
—
0.4
V
V
IH
Input HIGH Voltage
(1)
2.0
V
DD
+ 0.3
V
V
IL
Input LOW Voltage
(1)
–0.3
0.8
V
I
LI
Input Leakage
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
–1
1
μA
I
LO
Output Leakage
–1
1
μA
Note:
1. V
IL
(min) = –0.3V (DC); V
IL
(min) = –2.0V (pulse width - 2.0 ns).
V
IH
(max) = V
DD
+ 0.3V (DC); V
IH
(max) = V
DD
+ 2.0V (pulse width - 2.0 ns).
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
V
DD
(8ns)
3.3V +10%,-5%
V
DD
(10 ns)
3.3V + 10%
3.3V + 10%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS61LV2568L-10TL | 256K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV2568L-8K | 256K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV2568L-8T | 256K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV2568 | 256K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV2568-10K | 256K x 8 HIGH-SPEED CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV2568L-10TL | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 256Kx8 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV2568L-10TL-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 256Kx8 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV2568L-10T-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb 256Kx8 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV2568L-8K | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV2568L-8T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 8 HIGH-SPEED CMOS STATIC RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。