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參數(shù)資料
| 型號： | IS61LV2568L-10T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 256K X 8 STANDARD SRAM, 10 ns, PDSO44 |
| 封裝： | PLASTIC, TSOP2-44 |
| 文件頁數(shù)： | 8/14頁 |
| 文件大小： | 82K |
| 代理商： | IS61LV2568L-10T |
IS61LV2568L
ISSI
8
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
07/25/05
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,2)
(Over Operating Range)
- 8 ns
-10 ns
Symbol
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
1
t
PWE
2
t
SD
t
HD
t
HZWE
(3)
t
LZWE
(3)
Parameter
Min.
Max
Min.
Max.
Unit
Write Cycle Time
8
—
10
—
ns
CE
to Write End
7
—
8
—
ns
Address Setup Time to Write End
7
—
8
—
ns
Address Hold from Write End
0
—
0
—
ns
Address Setup Time
0
—
0
—
ns
WE
Pulse Width (
OE
= HIGH)
6
—
7
—
ns
WE
Pulse Width (
OE
= LOW)
6.5
—
8
—
ns
Data Setup to Write End
4
—
5
—
ns
Data Hold from Write End
0
—
0
—
ns
WE
LOW to High-Z Output
—
3
—
4
ns
WE
HIGH to Low-Z Output
0
—
0
—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1.
2. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
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| IS61LV2568L-8T | 256K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV2568 | 256K x 8 HIGH-SPEED CMOS STATIC RAM |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV2568L-10TL | 功能描述:靜態(tài)隨機存取存儲器 2Mb 256Kx8 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV2568L-10TL-TR | 功能描述:靜態(tài)隨機存取存儲器 2Mb 256Kx8 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV2568L-10T-TR | 功能描述:靜態(tài)隨機存取存儲器 2Mb 256Kx8 10ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV2568L-8K | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS61LV2568L-8T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 8 HIGH-SPEED CMOS STATIC RAM |
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