參數(shù)資料
型號(hào): IS61LV5128AL-12K
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 512K x 8 HIGH-SPEED CMOS STATIC RAM
中文描述: 512K X 8 STANDARD SRAM, 12 ns, PDSO36
封裝: 0.400 INCH, PLASTIC, MS-027, SOJ-36
文件頁(yè)數(shù): 3/9頁(yè)
文件大?。?/td> 73K
代理商: IS61LV5128AL-12K
Integrated Silicon Solution, Inc.
1-800-379-4774
Rev. B
07/16/01
3
IS61LV5128
ISSI
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
nent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
Value
Unit
V
°
C
°
C
W
0.5 to Vcc + 0.5
55 to +125
65 to +150
1.0
OPERATING RANGE
10 ns
V
CC
12 ns, 15 ns
V
CC
Range
Ambient Temperature
Commercial
0
°
C to +70
°
C
3.3V +10%, -5%
3.3V ± 10%
Industrial
40
°
C to +85
°
C
3.3V +10%, -5%
3.3V ± 10%
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
I/O
Input/Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
°
C, f = 1 MHz, Vcc = 3.3V.
相關(guān)PDF資料
PDF描述
IS61LV5128AL-12T 512K x 8 HIGH-SPEED CMOS STATIC RAM
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IS61LV5128 512K x 8 High-Speed CMOS Static RAM(512K x 8 高速CMOS靜態(tài)RAM)
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