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參數(shù)資料
| 型號(hào)： | IS61LV632A |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 32K x 32 Synchronous Fast SRAM(32K x 32 同步快速靜態(tài)RAM) |
| 中文描述： | 32K的× 32同步快速靜態(tài)存儲(chǔ)器（32K的× 32同步快速靜態(tài)內(nèi)存） |
| 文件頁(yè)數(shù)： | 1/16頁(yè) |
| 文件大小： | 176K |
| 代理商： | IS61LV632A |
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ISSI
IS61LV632A
IS61LV632A
32K x 32 SYNCHRONOUS FAST STATIC RAM
Integrated Silicon Solution, Inc.
PRELIMINARY
SR017-1C
05/18/98
1
This document contains preliminary data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We
assume no responsibility for any errors which may appear in this publication. Copyright 1998, Integrated Silicon Solution, Inc.
FEATURES
Fast access time:
– 4 ns-125 MHz; 5 ns-100 MHz;
6 ns-83 MHz; 7 ns-75 MHz; 8 ns-66 MHz
Internal self-timed write cycle
Individual Byte Write Control and Global Write
Clock controlled, registered address, data and
control
Pentium or linear burst sequence control
using MODE input
Three chip enables for simple depth expansion
and address pipelining
Common data inputs and data outputs
Power-down control by ZZ input
JEDEC 100-Pin TQFP and PQFP package
3.3V Vcc and 2.5V V
CCQ
for 2.5V I/Os
Two Clock enables and one Clock disable to
eliminate multiple bank bus contention.
Control pins mode upon power-up:
– MODE in interleave burst mode
– ZZ in normal operation mode
These control pins can be connected to GND
Q
or V
CCQ
to alter their power-up state
ISSI
DESCRIPTION
The
ISSI
IS61LV632A is a high-speed, low-power synchro-
nous static RAM designed to provide a burstable, high-
performance, secondary cache for the i486, Pentium,
680X0, and PowerPC microprocessors. It is organized
as 32,768 words by 32 bits, fabricated with
ISSI
's advanced
CMOS technology. The device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs into
a single monolithic circuit. All synchronous inputs pass through
registers controlled by a positive-edge-triggered single clock
input.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be from one to
four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
BW1
controls DQ1-DQ8,
BW2
controls DQ9-DQ16,
BW3
controls DQ17-DQ24,
BW4
controls DQ25-DQ32, conditioned
by
BWE
being LOW. A LOW on
GW
input would cause all bytes
to be written.
Bursts can be initiated with either
ADSP
(Address Status
Processor) or
ADSC
(Address Status Cache Controller) input
pins. Subsequent burst addresses can be generated inter-
nally by the IS61LV632A and controlled by the
ADV
(burst
address advance) input pin.
Asynchronous signals include output enable (
OE
), sleep mode
input (ZZ), clock (CLK) and burst mode input (MODE). A HIGH
input on the ZZ pin puts the SRAM in the power-down state.
When ZZ is pulled LOW (or no connect), the SRAM normally
operates after three cycles of the wake-up period. A LOW
input, i.e., GND
Q
, on MODE pin selects LINEAR Burst. A V
CCQ
(or no connect) on MODE pin selects INTERLEAVED Burst.
PRELIMINARY
MAY 1998
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| IS61LV632A-4PQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Synchronous SRAM |
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| IS61LV632A-5TQ | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 32 SYNCHRONOUS FAST STATIC RAM |
| IS61LV632A-6PQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Synchronous SRAM |
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