參數(shù)資料
型號(hào): IS61LV6416
廠商: Integrated Silicon Solution, Inc.
英文描述: 64K x 16 High-Speed CMOS Static RAM(3.3V,64K x 16 高速CMOS靜態(tài)RAM)
中文描述: 64K的× 16高速CMOS靜態(tài)RAM(3.3伏,64K的× 16高速的CMOS靜態(tài)RAM)的
文件頁(yè)數(shù): 1/10頁(yè)
文件大?。?/td> 79K
代理商: IS61LV6416
FEATURES
High-speed access time: 8, 10, 12, 15, and 20 ns
CMOS low power operation
— 250 mW (typical) operating
— 250 μW (typical) standby
TTL compatible interface levels
Single 3.3V power supply
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
IS61LV6416
64K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
DESCRIPTION
The
ISSI
IS61LV6416 is a high-speed, 1,048,576-bit
static RAM organized as 65,536 words by 16 bits. It is
fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields access times
as fast as 8 ns with low power consumption.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip
Enable and Output Enable inputs,
CE
and
OE
. The active
LOW Write Enable (
WE
) controls both writing and reading
of the memory.A data byte allows Upper Byte (
UB
) and
Lower Byte (
LB
) access.
The IS61LV6416 is packaged in the JEDEC standard
44-pin 400-mil SOJ, 44-pin TSOP, and 48-pin mini BGA
(6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
OCTOBER 2000
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc.
Rev. D
10/20/00
ISSI
A0-A15
CE
OE
WE
UB
LB
64K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS61LV6416-10 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY
IS61LV6416-10B 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY
IS61LV6416-10BI 制造商:Integrated Silicon Solution Inc 功能描述:
IS61LV6416-10BLI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb 64Kx16 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS61LV6416-10BLI-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb 64Kx16 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray