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參數資料
| 型號： | IS62V6416BLL |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 64K x 16 Low Voltage, Ultra Low Power CMOS SRAM(64K x 16 低壓，極低功耗CMOS靜態(tài)RAM) |
| 中文描述： | 64K的× 16低電壓，超低功耗CMOS SRAM（64K的× 16低壓，極低功耗的CMOS靜態(tài)RAM）的 |
| 文件頁數： | 5/11頁 |
| 文件大?。?/td> | 89K |
| 代理商： | IS62V6416BLL |
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Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. A
03/17/00
5
IS62V6416BLL
ISSI
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range Unless Otherwise Specified)
-100
-120
Symbol
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
I
CC
Vcc Dynamic
Operating
Supply Current
V
CC
= Max.,
I
OUT
= 0 mA, f = f
MAX
CS
= V
IH
Com.
Ind.
—
—
35
45
—
—
30
40
mA
I
SB
1
TTL Standby
Current
(TTL Inputs)
OR
ULB Control
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CS
≥
V
IH
, f = 0
Com.
Ind.
—
—
0.3
0.3
—
—
0.3
0.3
mA
V
CC
= Max., V
IN
= V
IH
or V
IL
CS
= V
IL
, f = 0,
UB
= V
IH
,
LB
= V
IH
I
SB
2
CMOS Standby
Current
(CMOS Inputs)
OR
ULB Control
V
CC
= Max.,
CS
≥
V
CC
–
0.2V
V
IN
≤
0.2V, f = 0
Com.
Ind.
—
—
5
5
—
—
5
5
μA
V
CC
= Max.,
CS
= V
IL
V
IN
≤
0.2V, f = 0;
UB
/
LB
= V
CC
–
0.2V
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency; f = 0 means no input lines change.
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
8
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
10
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IS62VV25616L | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM |
| IS62VV25616LL-70M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| IS62VV25616LL-70MI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| IS62VV25616LL-70T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM |
| IS62VV25616LL-70TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM |
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