參數(shù)資料
型號: IS64WV102416BLL-10MA3
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
中文描述: 1M X 16 STANDARD SRAM, 10 ns, PBGA48
封裝: 9 X 11 MM, MO-207, BGA-48
文件頁數(shù): 16/21頁
文件大?。?/td> 134K
代理商: IS64WV102416BLL-10MA3
16
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
02/13/06
ISSI
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
AC WAVEFORMS
WRITE CYCLE NO. 4
(
LB
,
UB
Controlled, Back-to-Back Write)
(1,3)
DATA UNDEFINED
t
WC
ADDRESS 1
ADDRESS 2
t
WC
HIGH-Z
t
PBW
WORD 1
LOW
WORD 2
UB_CEWR4.eps
t
HD
t
SA
t
HZWE
ADDRESS
CE
UB
,
LB
WE
D
OUT
D
IN
OE
VALID
IN
t
LZWE
t
SD
t
PBW
VALID
IN
t
SD
t
HD
t
SA
t
HA
t
HA
Notes:
1. The nternal Write time s defined by the overlap of
CE
= LOW,
UB
and/or
LB
= LOW, and
WE
= LOW. All signals must be n valid states to nitiate a Write, but
any can be deasserted to terminate the Write. The
t
SA
,
t
HA
,
t
SD
, and
t
HD
timing s referenced to the rising or falling edge of the signal that terminates the Write.
2. Tested with
OE
HIGH for a minimum of 4 ns before
WE
= LOW to place the I/O n a HIGH-Z state.
3.
WE
may be held LOW across many address cycles and the
LB
,
UB
pins can be used to control the Write function.
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