參數(shù)資料
型號(hào): IS64WV102416BLL-10MA3
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
中文描述: 1M X 16 STANDARD SRAM, 10 ns, PBGA48
封裝: 9 X 11 MM, MO-207, BGA-48
文件頁數(shù): 4/21頁
文件大?。?/td> 134K
代理商: IS64WV102416BLL-10MA3
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
02/13/06
ISSI
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
V
DD
T
STG
P
T
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Terminal Voltage with Respect to GND
V
DD
Relates to GND
Storage Temperature
Power Dissipation
Value
Unit
V
V
°C
W
–0.5 to V
DD
+ 0.5
–0.3 to 4.0
–65 to +150
1.0
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
I/O
Input/Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 3.3V.
TRUTH TABLE
I/O PIN
Mode
WE
CE
OE
LB
UB
I/O0-I/O7
I/O8-I/O15
V
DD
Current
Not Selected
X
H
X
X
X
High-Z
High-Z
I
SB
1
, I
SB
2
Output Disabled
H
X
L
L
H
X
X
H
X
H
High-Z
High-Z
High-Z
High-Z
I
CC
Read
H
H
H
L
L
L
L
L
L
L
H
L
H
L
L
D
OUT
High-Z
D
OUT
High-Z
D
OUT
D
OUT
I
CC
Write
L
L
L
L
L
L
X
X
X
L
H
L
H
L
L
D
IN
High-Z
D
IN
D
IN
I
CC
High-Z
D
IN
相關(guān)PDF資料
PDF描述
IS64WV102416BLL-10TA3 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64WV12816BLL 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS64WV12816BLL-15BA3 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS64WV12816BLL-15TA3 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS64WV12816BLL-15TLA3 128K x 16 HIGH-SPEED CMOS STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS64WV102416BLL-10MA3-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 16M (1Mx16) 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS64WV102416BLL-10MLA3 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 16M (1Mx16) 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS64WV102416BLL-10MLA3-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 16M (1Mx16) 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS64WV102416BLL-10TA3 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 16M (1Mx16) 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS64WV102416BLL-10TA3-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 16M (1Mx16) 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray