- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377575 > IS65C1024AL (Integrated Silicon Solution, Inc.) 128K x 8 LOW POWER CMOS STATIC RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | IS65C1024AL |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 128K x 8 LOW POWER CMOS STATIC RAM |
| 中文描述： | 128K的× 8低功耗CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大?。?/td> | 75K |
| 代理商： | IS65C1024AL |
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
01/24/05
ISSI
IS62C1024AL
IS65C1024AL
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-35 ns
Min.
-45 ns
Min.
Symbol
t
RC
t
AA
t
OHA
t
ACE
1
t
ACE
2
t
DOE
t
LZOE
(2)
t
HZOE
(2)
t
LZCE
1
(2)
t
LZCE
2
(2)
t
HZCE
(2)
Parameter
Max.
Max.
Unit
Read Cycle Time
35
—
45
—
ns
Address Access Time
—
35
—
45
ns
Output Hold Time
3
—
3
—
ns
CE1
Access Time
—
35
—
45
ns
CE2 Access Time
—
35
—
45
ns
OE
Access Time
—
10
—
20
ns
OE
to Low-Z Output
3
—
5
—
ns
OE
to High-Z Output
0
10
0
15
ns
CE1
to Low-Z Output
3
—
5
—
ns
CE2 to Low-Z Output
3
—
5
—
ns
CE1
or CE2 to High-Z Output
0
10
0
15
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of
0.6 to 2.4V and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
IS62C1024AL/IS65C1024AL
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-35 ns -45 ns
Min.
Max.
Symbol Parameter
Test Conditions
Min.
Max.
Unit
I
CC
Average operating
Current
CE1
= V
IL
, CE2 = V
IH
V
IN
= V
IH
or V
IL
,
I
I/O
= 0 mA
Com.
Ind.
Auto.
—
—
25
30
mA
—
35
I
CC
1
V
DD
Dynamic Operating
Supply Current
V
DD
= Max.,
CE1
= V
IL
I
OUT
= 0 mA, f = f
MAX
V
IN
= V
IH
or V
IL
CE2 = V
IH
Com.
Ind.
Auto.
typ.
(2)
—
—
30
35
mA
—
40
—
20
I
SB
1
TTL Standby Current
(TTL Inputs)
V
DD
= Max.,
V
IN
= V
IH
or V
IL
,
CE1
≥
V
IH
,
or CE2
≤
V
IL
, f = 0
V
DD
= Max.,
CE1
≥
V
DD
– 0.2V, or
CE2
≤
0.2V, V
IN
≥
V
DD
– 0.2V,
or V
IN
≤
V
SS
+ 0.2V, f = 0
Com.
Ind.
Auto.
—
—
1
mA
1.5
—
2
I
SB
2
CMOS Standby
Current (CMOS Inputs)
Com.
Ind.
Auto.
typ.
(2)
—
—
5
10
μA
—
15
—
4
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical Values are measured at V
DD
= 5V, T
A
= 25
o
C and not 100% tested.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS65C1024AL-45QA3 | 128K x 8 LOW POWER CMOS STATIC RAM |
| IS65C1024AL-45TA3 | 128K x 8 LOW POWER CMOS STATIC RAM |
| IS65C256AL | 32K x 8 LOW POWER CMOS STATIC RAM |
| IS65C256AL-25TA3 | 32K x 8 LOW POWER CMOS STATIC RAM |
| IS65C256AL-25TLA3 | 32K x 8 LOW POWER CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS65C1024AL-45QA3 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 LOW POWER CMOS STATIC RAM |
| IS65C1024AL-45QLA3 | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1M (128Kx8) 45ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS65C1024AL-45QLA3-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1M (128Kx8) 45ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS65C1024AL-45TA3 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 LOW POWER CMOS STATIC RAM |
| IS65C1024AL-45TLA3 | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1M (128Kx8) 45ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。