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參數(shù)資料
| 型號(hào)： | IS65LV256AL-45UA3 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| 中文描述： | 32K X 8 STANDARD SRAM, 45 ns, PDSO28 |
| 封裝： | 0.330 MM, PLASTIC, SOP-28 |
| 文件頁(yè)數(shù)： | 8/14頁(yè) |
| 文件大?。?/td> | 113K |
| 代理商： | IS65LV256AL-45UA3 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)當(dāng)前第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)
IS65LV256AL
IS62LV256AL
ISSI
8
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
03/17/06
Notes:
1. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
2. I/O will assume the High-Z state if
OE
≥
V
IH
.
HIGH-Z
DATA UNDEFINED
DATA-IN VALID
t
WC
t
SCE
t
SA
t
HA
t
PWE
t
AW
t
HZWE
t
SD
t
HD
t
LZWE
ADDRESS
D
IN
CE
WE
D
OUT
WRITE CYCLE NO. 2 (
CE
Controlled)
(1,2)
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|---|---|
| IS65LV256AL-45ULA3 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS65S | 制造商:IDEC Corporation 功能描述:SENS.IND. 10-30VDC PNP NC |
| IS65WV102416BLL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM |
| IS65WV102416BLL-25MA3 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM |
| IS65WV102416BLL-25TA3 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM |
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