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| 型號： | IS65WV25616BLL-55TA1 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| 中文描述： | 256K X 16 STANDARD SRAM, 55 ns, PDSO44 |
| 封裝： | PLASTIC, TSOP2-44 |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 109K |
| 代理商： | IS65WV25616BLL-55TA1 |
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
06/20/06
IS65WV25616ALL, IS65WV25616BLL
ISSI
IS65WV25616ALL, POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Test Conditions
Max.
70
25
30
10
15
Unit
I
CC
V
DD
Dynamic Operating
Supply Current
Operating Supply
Current
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
V
DD
= Max.,
CS1
= 0.2V
WE
= V
DD
-0.2V
f=1
MHZ
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CS1
= V
IH
, f = 1 MH
Z
OR
A1
mA
A2, A3
I
CC
1
A1
mA
A2, A3
I
SB
1
TTL Standby Current
(TTL Inputs)
A1
0.5
0.6
mA
A2, A3
ULB Control
V
DD
= Max., V
IN
= V
IH
or V
IL
CS1
= V
IL
, f = 0,
UB
= V
IH
,
LB
= V
IH
V
DD
= Max.,
CS1
≥
V
DD
– 0.2V,
V
IN
≥
V
DD
– 0.2V, or
A3
V
IN
≤
0.2V, f = 0
OR
I
SB
2
CMOS Standby
Current (CMOS Inputs)
A1
A2
15
30
50
μA
ULB Control
V
DD
= Max.,
CS1
= V
IL
,
V
IN
≤
0.2V, f = 0;
UB
/
LB
= V
DD
– 0.2V
IS65WV25616BLL, POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Test Conditions
Max.
55
40
—
15
—
Max.
70
—
40
—
20
Unit
I
CC
Vdd Dynamic Operating
Supply Current
Operating Supply
Current
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
V
DD
= Max.,
CS1
= 0.2V
WE
= V
DD
-0.2V,
f=1
MHZ
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CS1
= V
IH
, f = 1 MH
Z
OR
A1
mA
A2, A3
I
CC
1
A1
mA
A2, A3
I
SB
1
TTL Standby Current
(TTL Inputs)
A1
0.45
—
—
0.45
mA
A2, A3
ULB Control
V
DD
= Max., V
IN
= V
IH
or V
IL
CS1
= V
IL
, f = 0,
UB
= V
IH
,
LB
= V
IH
V
DD
= Max.,
CS1
≥
V
DD
– 0.2V,
V
IN
≥
V
DD
– 0.2V, or
A3
V
IN
≤
0.2V, f = 0
OR
I
SB
2
CMOS Standby
Current (CMOS Inputs)
A1
A2
20
—
—
—
55
90
μA
ULB Control
V
DD
= Max.,
CS1
= V
IL
,
V
IN
≤
0.2V, f = 0;
UB
/
LB
= V
DD
– 0.2V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS65WV25616BLL-55TLA1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS65WV25616BLL-70TA2 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS65WV25616BLL-70TA3 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS65WV25616BLL-70TLA3 | 功能描述:靜態(tài)隨機(jī)存取存儲器 4M (256Kx16) 70ns Async 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS65WV25616BLL-70TLA3-TR | 功能描述:靜態(tài)隨機(jī)存取存儲器 4M (256Kx16) 70ns Async 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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