- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377575 > IS65WV25616BLL-55TA1 (INTEGRATED SILICON SOLUTION INC) 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM PDF資料下載
參數(shù)資料
| 型號： | IS65WV25616BLL-55TA1 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| 中文描述： | 256K X 16 STANDARD SRAM, 55 ns, PDSO44 |
| 封裝： | PLASTIC, TSOP2-44 |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 109K |
| 代理商： | IS65WV25616BLL-55TA1 |
IS65WV25616ALL, IS65WV25616BLL
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
06/20/06
9
WRITE CYCLE NO. 2
(
WE
Controlled:
OE
is HIGH During Write Cycle)
DATA-IN VALID
DATA UNDEFINED
t
WC
t
SCS1
t
SCS2
t
AW
t
HA
t
PWE
t
HZWE
HIGH-Z
t
LZWE
t
SA
t
SD
t
HD
ADDRESS
OE
CS1
WE
LB
,
UB
DOUT
DIN
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the
CS1
,
WE
inputs and at least
one of the
LB
and
UB
inputs being in the LOW state.
2. WRITE = (
CS1
) [ (
LB
) = (
UB
) ] (
WE
).
AC WAVEFORMS
WRITE CYCLE NO. 1
(1,2)
(
CS1
Controlled,
OE
= HIGH or LOW)
DATA-IN VALID
DATA UNDEFINED
t
WC
t
SCS1
t
SCS2
t
AW
t
HA
t
PWE
t
HZWE
HIGH-Z
t
LZWE
t
SA
t
SD
t
HD
ADDRESS
CS1
WE
DOUT
DIN
LB
,
UB
t
PWB
51216LLWRITE 1.eps
51216LL WR2.eps
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS65WV25616BLL-55TLA1 | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS65WV25616BLL-70TA2 | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS65WV25616BLL-70TA3 | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS6MC256K | 256KB Secondary cache Module(256KB 次級高速緩沖存儲器模塊) |
| IS75V16F128GS32 | 3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS65WV25616BLL-55TLA1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS65WV25616BLL-70TA2 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS65WV25616BLL-70TA3 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS65WV25616BLL-70TLA3 | 功能描述:靜態(tài)隨機存取存儲器 4M (256Kx16) 70ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS65WV25616BLL-70TLA3-TR | 功能描述:靜態(tài)隨機存取存儲器 4M (256Kx16) 70ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。