參數(shù)資料
型號(hào): IS75V16F64GS16-7080DI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: 存儲(chǔ)器
英文描述: 64 Mbit FLASH MEMORY AND 16 Mbit PSEUDO SRAM STACKED MULTI-CHIP PACKAGE (MCP)
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA65
封裝: 9 X 9 MM, 0.80 MM PITCH, FBGA-65
文件頁(yè)數(shù): 40/50頁(yè)
文件大小: 255K
代理商: IS75V16F64GS16-7080DI
40
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00A
08/01/02
75V16F64GS16
ISSI
PSRAM WRITE TIMING
(
CE
1r Control)
PSRAM WRITE TIMING
(
WE
Control, Single Write Operation)
Address
Valid Data Input
CE
1r
OE
DQ
(Input)
Address Valid
WE
UB, LB
tDS
tDH
tAS
tAS
tAH
tWC
tBS
tOHCL
tCW
tWRC
tWH
tWS
tBH
tBS
tWS
Address
CE
1r
DQ
(Input)
tWC
OE
Valid Data Input
tOHz
tOHCL
tOES
tBS
Address Valid
tCS
tDS
tDH
tWP
tWR
tCP
tCH
tAS
tBH
WE
UB, LB
tOHAH
tAS
tAH
Note: CE2r must be High during write cycle.
Note: CE2r must be High during write cycle.
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