參數(shù)資料
型號: IS75V16F64GS16-7080DI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: 存儲器
英文描述: 64 Mbit FLASH MEMORY AND 16 Mbit PSEUDO SRAM STACKED MULTI-CHIP PACKAGE (MCP)
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA65
封裝: 9 X 9 MM, 0.80 MM PITCH, FBGA-65
文件頁數(shù): 44/50頁
文件大?。?/td> 255K
代理商: IS75V16F64GS16-7080DI
44
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00A
08/01/02
75V16F64GS16
ISSI
PSRAM POWER DOWN TIMING
PSRAM STANDBY ENTRY TIMING AFTER READ WRITE
CE
1r
DQ
tCHH
tCHS
tC2LP
tCSP
CE
2r
High - Z
Power Down Entry
Power Down Mode
Power Down Exit
CE
1r
WE
tCHOX
tCHWX
OE
Active (Read)
Standby
Active (Write)
Standby
Note: Both tCHOX and tCHWX define the earliest entry timing for Standby mode. If either of timing is not satis-
fied, it takes tRC (min) period from either last address transition of A0 and A1, or
CE
1r Low to High transition.
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