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參數(shù)資料
| 型號： | IXER35N120D1 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | NPT3 IGBT with Diode |
| 中文描述： | 50 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ISOPLUS247, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 52K |
| 代理商： | IXER35N120D1 |
1 - 2
2002 IXYS All rights reserved
2
Features
NPT
3
IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
HiPerFRED
TM
diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
ISOPLUS 247
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- high reliability
- industry standard outline
Applications
single switches
choppers with complementary free
wheeling diodes
phaselegs, H bridges, three phase
bridges e.g. for
- power supplies, UPS
- AC, DC and SR drives
- induction heating
IGBT
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C
1200
V
V
GES
±
20
V
I
C25
I
C90
T
C
= 25°C
T
C
= 90°C
50
32
A
A
I
CM
V
CEK
V
=
±
15 V; R
= 39
; T
= 125°C
RBSOA, Clamped inductive load; L = 100 μH
50
V
CES
A
t
(SCSOA)
V
= 900V; V
GE
=
±
15 V; R
G
= 39
; T
VJ
= 125°C
non-repetitive
10
μs
P
tot
T
C
= 25°C
200
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 35 A; V
GE
= 15 V; T
VJ
= 25°C
2.2
2.6
2.8
V
V
T
VJ
= 125°C
V
GE(th)
I
C
= 1 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
0.4
mA
mA
0.4
I
GES
V
CE
= 0 V; V
GE
=
±
20 V
200
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
150
60
700
50
4.2
3.5
ns
ns
ns
ns
mJ
mJ
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 30 A
2
nF
nC
250
R
thJC
R
thJH
0.6 K/W
1.2
K/W
Inductive load, T
= 125°C
V
CE
= 600 V; I
C
= 35 A
V
GE
= ±15 V; R
G
= 39
I
C25
V
CES
V
CE(sat) typ.
= 2.2 V
= 50 A
= 1200 V
NPT
3
IGBT
with Diode
in ISOPLUS 247
TM
Advanced Technical Information
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
IXER 35N120D1
G
C
E
GC
E
G = Gate
C = Collector
E = Emitter
*Patent pending
Isolated Backside*
ISOPLUS 247
TM
E153432
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相關(guān)代理商/技術(shù)參數(shù) |
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| IXER35N120D1_06 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:NPT3 IGBT with Diode in ISOPLUS247 |
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