參數(shù)資料
型號(hào)： IXFC15N80Q
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerFET ISOPLUS 220 MOSFET Q-Class Electrically Isolated Back Surface
中文描述： 13 A, 800 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOPLUS220, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 517K
代理商： IXFC15N80Q
2003 IXYS All rights reserved
Symbol
Test Conditions
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Maximum Ratings
V
DSS
V
DGR
800
800
V
V
V
GS
V
GSM
I
D25
I
DM
I
AR
Continuous
Transient
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
13
A
60
A
15
A
E
AR
E
AS
30
mJ
1.0
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10
V/ns
P
D
T
J
T
JM
T
stg
230
W
°
C
°
C
°
C
-40 ... +150
150
-40 ... +150
T
L
V
ISOL
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Weight
2
g
DS98946B(07/03)
IXFC 15N80Q
V
DSS
I
D25
R
DS(on)
t
rr
≤
250 ns
= 800 V
= 13 A
= 0.65
HiPerFET
TM
ISOPLUS 220
TM
MOSFET
Q-Class
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Features
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
Low drain to tab capacitance(<35pF)
z
Low R
z
Rugged polysilicon gate cell structure
z
Unclamped Inductive Switching (UIS)
rated
z
Fast intrinsic Rectifier
Applications
z
DC-DC converters
z
Battery chargers
z
Switched-mode and resonant-mode
power supplies
z
DC choppers
z
AC motor control
Advantages
z
Easy assembly: no screws or isolation
foils required
z
Space savings
z
High power density
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
DSS
V
GS
= 0 V, I
D
= 3 mA
Test Conditions
Characteristic Values
Min. Typ.
Max.
800
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.0
4.5
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
T
J
= 25
°
C
T
J
= 125
°
C
25
μ
A
mA
1
R
DS(on)
0.65
F
C
50/60 Hz, RMS t = 1 min leads to tab 2500 V
mounting force with clip 11...65 / 2.5...15
N
/lb
G = Gate
S = Source
D = Drain
G
DS
ISOPLUS220
TM
Isolated back surface*
See IXFH15N80Q data sheet for
characteristic curves
相關(guān)PDF資料
PDF描述
IXFC24N50 HiPerFET MOSFETs ISOPLUS220
IXFC26N50 HiPerFET MOSFETs ISOPLUS220
IXFC52N30P PolarHTTM HiPerFET Power MOSFET
IXFC80N10 HiPerFETTM MOSFET ISOPLUS220
IXFE44N60 Aluminum Electrolytic Capacitor; Capacitor Type:Motor Start/Motor Run; Voltage Rating:250VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to ? C; Capacitance:2900uF RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFC16N50P 功能描述:MOSFET 500V 16A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFC16N80P 功能描述:MOSFET DIODE Id9 BVdass800 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFC20N80P 功能描述:MOSFET 10 Amps 800V 0.5 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFC22N60P 功能描述:MOSFET 600V 22A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFC24N50 功能描述:MOSFET 21 Amps 500V 0.23 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*