參數(shù)資料
型號(hào)： IXFC24N50
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerFET MOSFETs ISOPLUS220
中文描述： 21 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOPLUS220, 3 PIN
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 67K
代理商： IXFC24N50
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
500
500
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
T
C
= 25
°
C
26N50
24N50
26N50
24N50
26N50
24N50
23
21
92
84
26
24
A
A
A
A
A
A
I
DM
T
C
= 25
°
C, Pulse width limited by T
JM
I
AR
T
C
= 25
°
C
E
AR
T
C
= 25
°
C
30
mJ
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 2
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
5
V/ns
P
D
T
C
= 25
°
C
230
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°
C
V
ISOL
50/60 Hz, RMS
t = 1 minute leads-to-tab
2500
V~
Weight
3
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
500
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250uA
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±
20 V
DC
, V
DS
= 0
2
4
V
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= I
T
Notes 1 & 2
T
J
= 25
°
C
T
J
= 125
°
C
26N50
24N50
200
1
μ
A
mA
R
DS(on)
0.20
0.23
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast ntrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly: no screws, or isolation
foils required
Space savings
High power density
Low collector capacitance to ground
(low EMI)
G = Gate
S = Source
D = Drain
* Patent pending
Isolated back surface*
V
DSS
500 V
500 V
I
D25
23 A
21 A
R
DS(on)
0.20
0.23
IXFC 26N50
IXFC 24N50
t
rr
≤
250 ns
HiPerFET
TM
MOSFETs
ISOPLUS220
TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode
High dV/dt,
Low t
rr
, HDMOS
TM
Family
ISOPLUS 220
TM
98755 (10/00)
S
GD
ADVANCE TECHNICAL INFORMATION
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