參數(shù)資料
型號： IXFC24N50
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerFET MOSFETs ISOPLUS220
中文描述： 21 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOPLUS220, 3 PIN
文件頁數(shù)： 2/2頁
文件大?。?/td> 67K
代理商： IXFC24N50
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 15 V; I
D
= I
T
Note 1
11
21
S
C
iss
C
oss
C
rss
4200
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
450
pF
135
pF
t
d(on)
t
r
t
d(off)
t
f
16
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
R
G
= 1
(External),
33
ns
65
ns
30
ns
Q
g(on)
Q
gs
Q
gd
135
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
28
nC
62
nC
R
thJC
0.54
K/W
R
thCK
0.30
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
26
A
I
SM
Repetitive; pulse width limited by T
JM
104
A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 125
°
C
250
400
ns
ns
μ
C
μ
C
Q
RM
1
2
1
I
RM
10
15
A
A
I
F
= I
s
, -di/dt = 100 A/
μ
s,
V
R
= 100 V
Note: 1. Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
2. I
T
test current:
IXFC26N50
IXFC24N50
I
T
= 13A
I
T
= 12A
3. See IXFH26N50 data sheet for characteristic curves.
IXFC 26N50
IXFC 24N50
ISOPLUS220 OUTLINE
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
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參數(shù)描述
IXFC26N50 功能描述:MOSFET 23 Amps 500V 0.2 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFC26N50P 功能描述:MOSFET 500V 26A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFC30N60P 功能描述:MOSFET 600V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFC36N50P 功能描述:MOSFET 500V 36A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFC40N30Q 功能描述:MOSFET 40 Amps 300V 0.088W Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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