參數(shù)資料
型號： IXGH32N60AU1S
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： HiPerFAST IGBT with Diode Combi Pack
中文描述： 60 A, 600 V, N-CHANNEL IGBT
封裝： TO-247SMD, COMBIPACK-3
文件頁數(shù)： 2/2頁
文件大?。?/td> 69K
代理商： IXGH32N60AU1S
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= I
C90
; V
CE
= 10 V,
25
S
C
ies
C
oes
C
res
2700
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
240
pF
50
pF
Q
g
Q
ge
Q
gc
110
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
22
nC
40
nC
t
d(on)
t
ri
t
d(off)
t
fi
E
off
25
ns
20
ns
100
200
ns
80
150
ns
0.6
1.2
mJ
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
25
ns
25
ns
1
mJ
120
ns
120
ns
1.2
mJ
R
thJC
R
thCK
0.62 K/W
TO-247
0.25
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
V
F
I
F
= I
C90
, V
GE
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 % T
J
= 25
°
C
T
J
= 150
°
C
1.6
2.5
V
V
I
RM
t
rr
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 100 A/
μ
s
V
R
= 360 V
I
F
= 1 A; -di/dt = 100 A/
μ
s; V
R
= 30 V T
J
= 25
°
C
6
A
ns
ns
T
J
= 125
°
C
100
25
R
thJC
1.0 K/W
Inductive load, T
J
= 25
°
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
μ
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may increase for
V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125
°
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
μ
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may increase for
V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
IXGH 32N60BD1
IXGT 32N60BD1
TO-247 AD (IXGH) Outline
Dim.
Millimeter
Min.
Inches
Min.
Max.
Max.
A
B
19.81 20.32
20.80 21.46
0.780
0.819
0.800
0.845
C
D
15.75 16.26
3.55
0.610
0.140
0.640
0.144
3.65
E
F
4.32
5.4
5.49
6.2
0.170
0.212
0.216
0.244
G
H
1.65
2.13
4.5
0.065
-
0.084
0.177
-
J
K
1.0
10.8
1.4
11.0
0.040
0.426
0.055
0.433
L
M
4.7
0.4
5.3
0.8
0.185
0.016
0.209
0.031
N
1.5
2.49
0.087
0.102
TO-268AA (D
3
PAK)
Dim.
Millimeter
Min.
Inches
Min.
Max.
Max.
A
A
1
A
2
4.9
2.7
.02
5.1
2.9
.25
.193
.106
.001
.201
.114
.010
b
b
2
C
1.15
1.9
1.45
2.1
.65
.045
.75
.016
.057
.83
.026
.4
D
E
E
1
13.80
15.85
13.3
14.00
16.05
13.6
.543
.624
.524
.551
.632
.535
e 5.45 BSC .215 BSC
H
18.70
19.10
L
2.40
2.70
.736
.094
.752
.106
L1
L2
L3 0.25 BSC .010 BSC
L4
3.80
4.10
1.20
1.00
1.40
1.15
.047
.039
.055
.045
.150
.161
相關PDF資料
PDF描述
IXGH32N60BU1 HiPerFAST IGBT with Diode(VCES為600V，VCE(sat)為2.5V的HiPerFAST絕緣柵雙極晶體管（帶二極管）)
IXGH32N60B HiPerFAST IGBT
IXGH32N60C HiPerFAST IGBT Lightspeed Series
IXGH35N120B HiPerFAST IGBT(VCES為1200V，VCE(sat)為3.3V的HiPerFAST絕緣柵雙極晶體管)
IXGH35N120 IGBT Lightspeed Series
相關代理商/技術參數(shù)
參數(shù)描述
IXGH32N60B 功能描述:IGBT 晶體管 60 Amps 600V 2.3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGH32N60B_03 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT
IXGH32N60BD1 功能描述:IGBT 晶體管 60 Amps 600V 2.3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGH32N60BS 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | TO-247SMD
IXGH32N60BU1 功能描述:IGBT 晶體管 60 Amps 600V 2.3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*