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參數(shù)資料
| 型號： | IXGN80N30BD1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | IGBT with Diode(VCES為300V，VCE(sat)為2.4V的絕緣柵雙極晶體管（帶二極管）) |
| 中文描述： | 120 A, 300 V, N-CHANNEL IGBT |
| 封裝： | MINIBLOC-4 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 77K |
| 代理商： | IXGN80N30BD1 |
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
300
300
V
A
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
G
= 4.7
Clamped inductive load
120
80
300
A
A
A
I
= 120
@ 0.8 V
CES
A
P
C
V
ISOL
T
C
= 25 C
50/60 Hz
I
ISOL
1 mA
310
W
t = 1 min
t = 1 s
2500
3000
V~
V~
T
J
T
JM
T
stg
M
d
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
V
CES
I
C25
V
CE(sat)
= 2.4 V
= 300 V
= 120 A
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 500 A, V
GE
= 0 V
= 250 A, V
CE
= V
GE
300
2.5
V
V
5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
400
A
2
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.4
V
Features
International standard package
Aluminium-nitride solation
- high power dissipation
Isolation voltage 3000 V~
Fast Recovery
Epitaxial Diode
- short t
rr
and
low I
RM
Low collector-to-case capacitance
(< 50 pF)
- reducesd RFI
Low package inductance (< 10 nH)
- easy to drive and to protect
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Space savings
Easy to mount with 2 screws
High power density
E
G
E
C
E = Emitter
G = Gate
C = Collector
E = Emitter
Either Emitter terminal can be used as Main or
Kelvin Emitter
SOT-227B, miniBLOC
E 153432
C
E
E
G
IGBT with Diode
98734 (08/00)
IXGN 80N30BD1
相關(guān)PDF資料 |
PDF描述 |
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| IXGR24N60C | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:24; Connector Shell Size:24; Connecting Termination:Crimp; Circular Shell Style:Right Angle Plug; Body Style:Right Angle |
| IXGR32N60CD1 | HiPerFAST IGBT with Diode(VCES為600V，VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管（帶二極管）) |
| IXGR40N60BD1 | IGBT with Diode(VCES為600V，VCE(sat)為2.2V的絕緣柵雙極晶體管(帶二極管）) |
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| IXGN82N120B3H1 | 功能描述:IGBT 模塊 Mid-Frequency Range 15khz-40khz w/ Diode RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IXGN82N120C3H1 | 功能描述:IGBT 晶體管 130Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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