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參數(shù)資料
| 型號： | IXKF40N60SCD1 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | CONN 60POS .1X.1 IDC RIBBON PCB |
| 中文描述： | 38 A, 600 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOPLUS, I4PAC-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 34K |
| 代理商： | IXKF40N60SCD1 |
2002 IXYS All rights reserved
1 - 2
CoolMOS
Power MOSFET
with Series Schottky Diode and
Ultra Fast Antiparallel Diode
in High Voltage ISOPLUS i4-PAC
TM
IXKF 40N60SCD1
Features
fast CoolMOS power MOSFET - 2nd
generation
- High blocking voltage
- Low on resistance
- Low thermal resistance due to reduced
chip thickness
Series Schottky diode prevents current
flow through MOSFET’s body diode
- very low forward voltage
- fast switching
Ultra fast HiPerFRED
TM
anti parallel diode
- low operating forward voltage
- fast and soft reverse recovery - low switching
losses
ISOPLUS i4-PAC
TM
high voltage package
- isolated back surface
- low coupling capacity between pins and
heatsink
- enlarged creepage towards heatsink
- enlarged creepage between high voltage
pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
Converters with
circuit operation leading to current flow
through switches in reverse direction - e. g.
- phaseleg with inductive load
- resonant circuits
high switching frequency
Examples
switched mode power supplies (SMPS)
uninterruptable power supplies (UPS)
DC-DC converters
welding converters
converters for inductive heating
drive converters
CoolMOS is a trademark of
Infineon Technologies AG.
Advanced Technical Information
IXYS reserves the right to change limits, test conditions and dimensions.
I
D25
V
DSS
R
DSon
= 60 m
t
rr
= 70 ns
= 38 A
= 600 V
MOSFET T
Symbol
Conditions
Maximum Ratings
V
DSS
T
VJ
= 25°C to 150°C
600
V
V
GS
±20
V
I
D25
I
D90
T
C
= 25°C
T
C
= 90°C
38
25
A
A
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
R
DSon
V
GS
= 10 V;
I
D
= I
D90
60
70 m
V
GSth
V
DS
= 20 V;
I
D
= 3 mA;
3.5
5.5
V
I
DSS
V
DS
= V
DSS
;
V
GS
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
0.3 mA
0.5
mA
I
GSS
V
GS
= ±20 V; V
DS
= 0 V
100
nA
Q
g
Q
gs
Q
gd
220
55
125
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
30
95
100
10
ns
ns
ns
ns
R
thJC
R
thJH
0.45 K/W
with heat
transfer paste
0.9
K/W
V
GS
= 10 V; V
DS
= 350 V; I
D
= 50 A
V
= 10 V; V
= 380 V;
I
D
= 25 A; R
G
= 1.8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXKG25N80C | 功能描述:MOSFET 25 Amps 800V 0.15 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXKH20N60C5 | 功能描述:MOSFET 20 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXKH24N60C5 | 功能描述:MOSFET 24 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXKH30N60C5 | 功能描述:MOSFET 30 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXKH35N60C5 | 功能描述:MOSFET 35 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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