參數(shù)資料
型號： IXKG25N80C
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： CoolMOS Power MOSFET ISO264
中文描述： 25 A, 800 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISO264, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 507K
代理商： IXKG25N80C
2003 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
GS
I
D25
I
D90
I
D(RMS)
E
AS
E
AR
dv/dt
T
J
Continuous
= 25
°
C to 150
°
C
800
V
±
20
V
T
C
T
C
Package lead current limit
= 25
°
C
= 90
°
C
25
9
A
A
45
A
I
o
I
o
V
DS
<
V
,
I
F
≤
17 A,
T
VJ
= 150
°
C
d
IR
/dt = 100 A/
μ
s
T
C
= 25
°
C
= 10A, T
C
= 25
°
C
= 20A
690
0.5
mJ
mJ
V/ns
6
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight
250
W
-55 ... +150
150
°
C
°
C
°
C
-55 ... +125
1.6 mm (0.062 in.) from case for 10 s
300
°
C
RMS leads-to-tab, 50/60 Hz, t = 1 minute
2500
V~
Mounting torque
0.9 / 6
Nm/lb-in
8
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
R
DS(on)
V
GS
= 10 V, I
D
= I
D90
, Note 1
V
GS
= 10 V, I
D
= I
D90
, Note 1 T
J
= 125
°
C
126
297
150 m
m
V
GS(th)
V
DS
= V
GS
, I
D
= 2 mA
2
4
V
I
DSS
V
DS
= V
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
50
μ
A
μ
A
10
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
200
nA
G = Gate,
S = Source
D = Drain,
* Patent pending
V
DSS
I
D25
R
DS(on)
= 800 V
= 25 A
=150 m
DS99099(10/03)
ADVANCE TECHNICAL INFORMATION
Features
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
3
RD
generation CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
z
Low thermal resistance due to reduced
chip thickness
z
Low drain to tab capacitance(<40pF)
Applications
z
Switched Mode Power Supplies (SMPS)
z
Uninterruptible Power Supplies (UPS)
z
Power Factor Correction (PFC)
z
Welding
z
Inductive Heating
Advantages
z
Easy assembly
z
Space savings
z
High power density
CoolMOS
TM
Power MOSFET
ISO264
TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Low R
DS(on)
, High Voltage MOSFET
IXKG 25N80C
CoolMOS is a trademark of Infineon
Technology.
ISO264
TM
S
G
D
(TAB)
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