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參數(shù)資料
| 型號： | IXSH15N120BD1 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | S Series - Improved SCSOA Capability |
| 中文描述： | 30 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 56K |
| 代理商： | IXSH15N120BD1 |
2 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Note 2
= I
C90
; V
CE
= 10 V,
7
9.5
S
C
ies
C
oes
C
res
1400
120
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
37
Q
g
Q
ge
Q
gc
57
14
25
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
t
d(off)
t
fi
E
off
30
25
ns
ns
ns
ns
mJ
148
126
1.5
300
250
2.9
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
30
25
2.6
265
298
3.1
ns
ns
mJ
ns
ns
mJ
R
thJC
R
thCK
0.83 K/W
(TO-247)
0.25
K/W
Inductive load, T
J
= 125 C
I
C
= I
, V
GE
= 15 V
R
= 10
V
CE
= 0.8 V
CES
Note 3
Inductive load, T
J
= 25 C
I
C
= I
, V
GE
= 15 V
R
G
= 10
V
= 0.8 V
CES
Note 3
Notes: 1. Device must be heatsunk for high temperature leakage current measurements to
avoid thermal runaway.
2. Pulse test, t 300 s, duty cycle 2 %
3. Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
orincreased R
G
.
IXSH 15N120BD1
IXST 15N120BD1
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
V
F
I
= I
, V
GE
= 0 V
Note 2
T
J
= 150
O
C
T
J
= 25
O
C
1.7
2.5
V
V
I
RM
I
F
= 30A; V
= 0 V; T
= 100 C
V
R
= 100 V; -di
F
/dt = 100 A/ s
I
F
= 1 A; -di/dt = 200 A/ s; V
R
= 30 V
5.5
A
t
rr
R
thJC
T
J
= 25 C
30
ns
0.9 K/W
TO-247 AD (IXSH) Outline
Dim. Millimeter
Min.
Inches
Min.
Max.
Max.
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
C
D
15.75 16.26
3.55
0.610 0.640
0.140 0.144
3.65
E
F
4.32
5.4
5.49
6.2
0.170 0.216
0.212 0.244
G
H
1.65
2.13
4.5
0.065 0.084
-
-
0.177
J
K
1.0
10.8
1.4
11.0
0.040 0.055
0.426 0.433
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5
2.49
0.087 0.102
TO-268AA (D
3
PAK)
Dim.
Millimeter
Min.
4.9
2.7
.02
1.15
1.9
.4
13.80
15.85
13.3
e 5.45 BSC .215 BSC
H
18.70
19.10
L
2.40
2.70
L1
1.20
1.40
L2
1.00
1.15
L3 0.25 BSC .010 BSC
L4
3.80
4.10
Inches
Min.
.193
.106
.001
.045
.75
.016
.543
.624
.524
Max.
5.1
2.9
.25
1.45
2.1
.65
14.00
16.05
13.6
Max.
.201
.114
.010
.057
.83
.026
.551
.632
.535
A
A
1
A
2
b
b
2
C
D
E
E
1
.736
.094
.047
.039
.752
.106
.055
.045
.150
.161
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
相關PDF資料 |
PDF描述 |
|---|---|
| IXST15N120BD1 | S Series - Improved SCSOA Capability |
| IXSH15N120AU1 | IGBT with Diode |
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| IXSH16N60U1 | Low VCE(sat) IGBT with Diode(VCES為600V，VCE(sat)為1.8V的絕緣柵雙極晶體管(帶二極管）) |
| IXSH20N60U1 | Low VCE(sat) IGBT with Diode, High Speed IGBT with Diode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IXSH16N60U1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 32A I(C) | TO-247AD |
| IXSH17N100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 17A I(C) | TO-247AD |
| IXSH17N100A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 17A I(C) | TO-247AD |
| IXSH20N60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-247AD |
| IXSH20N60A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-247AD |
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