參數(shù)資料
型號(hào)： IXSH20N60U1
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： Low VCE(sat) IGBT with Diode, High Speed IGBT with Diode
中文描述： 40 A, 600 V, N-CHANNEL IGBT, TO-247AD
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 112K
代理商： IXSH20N60U1
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
TO-247 AD
V
CES
600 V
600 V
I
C25
40 A
40 A
V
CE(sat)
2.5 V
3.0 V
Low V
CE(sat)
IGBT with Diode
High Speed IGBT with Diode
IXSH
20
N60U1
IXSH
20
N60AU1
Combi Packs
Short Circuit SOA Capability
G
CE
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 82
Clamped inductive load, L = 100
μ
H
40
20
80
A
A
A
I
= 40
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 360 V, T
J
= 125
°
C
R
G
= 82
,
non repetitive
T
C
= 25
°
C
10
μ
s
P
C
T
J
T
JM
T
stg
M
d
Weight
150
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque
1.13/10 Nm/lb.in.
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 1.75 mA, V
GE
= 0 V
= 1.5 mA, V
CE
= V
GE
600
3.5
V
V
6.5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
500
μ
A
mA
8
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
20N60U1
20N60AU1
2.5
3.0
V
V
Features
G
International standard package
JEDEC TO-247 AD
G
High frequency IGBT with
guaranteed
Short Circuit SOA capability
G
IGBT and anti-parallel FRED in one
package
G
2nd generation HDMOS
TM
process
G
Low V
- for low on-state conduction losses
G
MOS Gate turn-on
- drive simplicity
Applications
G
AC motor speed control
G
DC servo and robot drives
G
DC choppers
G
Uninterruptible power supplies (UPS)
G
Switch-mode and resonant-mode
power supplies
Advantages
G
Space savings (two devices in one
package)
G
Easy to mount with 1 screw
(isolated mounting screw hole)
G
Reduces assembly time and cost
G
High power density
91770D (4/96)
Not for new designs
相關(guān)PDF資料
PDF描述
IXSH20N60AU1 Low VCE(sat) IGBT with Diode, High Speed IGBT with Diode
IXSH24N60AU1 HiPerFASTTM IGBT with Diode
IXSH24N60U1 HiPerFASTTM IGBT with Diode
IXSH24N60 HiPerFAST IGBT(VCES為600V，VCE(sat)為2.2V的HiPerFAST絕緣柵雙極晶體管)
IXSH24N60A HiPerFAST IGBT(VCES為600V，VCE(sat)為2.7V的HiPerFAST絕緣柵雙極晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXSH24N60 功能描述:IGBT 晶體管 48 Amps 600V 2.2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXSH24N60A 功能描述:IGBT 晶體管 S-SERIES LO VCE SNGL 600V 24A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXSH24N60AU1 功能描述:IGBT 晶體管 48 Amps 600V 2.7 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXSH24N60AU1S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-263VAR
IXSH24N60B 功能描述:IGBT 晶體管 48 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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