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參數(shù)資料
| 型號： | IXSP16N60 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Low V CE(sat) IGBT - Short Circuit SOA Capability |
| 中文描述： | 32 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 48K |
| 代理商： | IXSP16N60 |
1997 IXYS All rights reserved
96539A (05/97)
Features
l
International standard package
l
Guaranteed Short Circuit SOA
capability
l
Low V
- for low on-state conduction losses
l
High current handling capability
l
MOS Gate turn-on
- drive simplicity
l
Fast fall time for switching speeds
up to 20 kHz
Applications
l
AC motor speed control
l
Uninterruptible power supplies (UPS)
l
Welding
Advantages
l
High power density
G
E
TAB
V
CES
I
C25
V
CE(sat)typ
= 1.8V
= 600V
=
16A
IXSA 16N60
IXSP 16N60
Low V
CE(sat)
IGBT
Short Circuit SOA Capability
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 150
Clamped inductive load, L = 300
μ
H
32
16
52
A
A
A
I
= 32
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 360 V, T
J
= 125
°
C
R
G
= 82
,
non repetitive
T
C
= 25
°
C
5
μ
s
P
C
T
J
T
JM
T
stg
Weight
100
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
2
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering for 10s
300
°
C
260
°
C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
TO-263AA
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250
μ
A, V
GE
= 0 V
= 750
μ
A, V
CE
= V
GE
600
3.5
V
V
6.5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
200
μ
A
mA
1
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
1.8
2.3
V
Preliminary Data Sheet
GCE
TO-220AB(IXSP)
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| IXSP20N60B2D1 | 功能描述:IGBT 晶體管 20 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSP24N60B | 功能描述:IGBT 晶體管 48 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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| IXSQ10N60B2D1 | 功能描述:IGBT 晶體管 10 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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