參數(shù)資料
型號: IXSR40N60CD1
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: IGBT with Diode(VCES為600V,VCE(sat)為2.5V的絕緣柵雙極晶體管(帶二極管))
中文描述: 62 A, 600 V, N-CHANNEL IGBT, TO-247AD
封裝: ISOPLUS247, 3 PIN
文件頁數(shù): 1/2頁
文件大小: 36K
代理商: IXSR40N60CD1
1 - 2
2000 IXYS All rights reserved
G = Gate,
E = Emitter
C = Collector,
98673A (7/00)
IGBT with Diode
ISOPLUS247
TM
(Electrically Isolated Backside)
Short Circuit SOA Capability
Preliminary data
Features
DCB Isolated mounting tab
Meets TO-247AD package Outline
High current handling capability
Latest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
Easy assembly
High power density
Very fast switching speeds for high
frequency applications
IXSR 40N60CD1
V
CES
I
C25
V
CE(SAT)
t
fi(typ)
= 600 V
= 62 A
= 2.5 V
= 70 ns
* Patent pending
ISOPLUS 247
TM
(IXSR)
E 153432
G
C
Isolated backside*
E
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C, limited by leads
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 22
Clamped inductive load, L = 30 H
62
37
150
A
A
A
I
= 80
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 360 V, T
J
= 125 C
R
G
= 22
non repetitive
T
C
= 25 C
10
s
P
C
T
J
T
JM
T
stg
V
ISOL
210
W
-55 ... +150
C
C
C
150
-55 ... +150
50/60 Hz, RMS
t = 1 min
2500
V~
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
C
Weight
PLUS247
5
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 1 mA, V
GE
= 0 V
= 4 mA, V
CE
= V
GE
600
V
V
4
7
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
650
A
T
J
= 150 C
5
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
T
, V
GE
= 15 V
2.5
V
IXYS reserves the right to change limits, test conditions, and dimensions.
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