參數(shù)資料
型號(hào)： IXTA75N10P
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： N-Channel Enhancement Mode
中文描述： 75 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： TO-263, 3 PIN
文件頁數(shù)： 2/5頁
文件大?。?/td> 581K
代理商： IXTA75N10P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 75N10P IXTP 75N10P
IXTQ 75N10P
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,259,123B1 6,306,728B1 6,683,344
6,534,343
6,583,505
Symbol
Test Conditions Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
20
28
S
C
iss
C
oss
C
rss
2250
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
890
275
pF
pF
t
d(on)
t
r
t
d(off)
t
f
27
53
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
R
G
= 10
(External)
66
45
ns
ns
Q
g(on)
Q
gs
Q
gd
74
18
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
40
nC
R
thJC
R
thCK
0.42K/W
(TO-3P)
(TO-220)
0.21
0.25
K/W
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
75
A
I
SM
Repetitive
200
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.5
V
t
rr
I
= 25 A
-di/dt = 100 A/
μ
s
V
R
= 75 V
120
ns
Q
RM
1.4
μ
C
TO-3P (IXTQ) Outline
Pins:
1 - Gate
2 - Drain
TO-220 (IXTA) Outline
Dim.
Millimeter
Min.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
Inches
Min.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
Max.
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
Max.
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
TO-263 (IXTP) Outline
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參數(shù)描述
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IXTA76P10T 功能描述:MOSFET -76 Amps -100V 0.024 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTA76P10T-TRL 制造商:IXYS Corporation 功能描述:TRENCHP POWER MOSFET
IXTA7N60P 功能描述:MOSFET 7 Amps 600V 1.1 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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