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參數(shù)資料
| 型號(hào)： | IXTH12N90 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement Mode MegaMOSFET(最大漏源擊穿電壓900V,導(dǎo)通電阻0.90Ω的N溝道增強(qiáng)型MegaMOSFET) |
| 中文描述： | 12 A, 900 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 102K |
| 代理商： | IXTH12N90 |
2 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
6
12
S
C
iss
C
oss
C
rss
4500
315
65
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
20
33
63
32
50
50
100
50
ns
ns
ns
ns
V
GS
R
G
= 2
,
(External)
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
Q
g(on)
Q
gs
Q
gd
145
30
55
170
45
80
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
thJC
R
thCK
0.42
K/W
K/W
0.25
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
12
A
I
SM
Repetitive;
pulse width limited by T
JM
48
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.5
V
t
rr
I
F
= I
S
, -di/dt = 100 A/
μ
s, V
R
= 100 V
900
ns
IXTH 12N90
IXTM 12N90
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
TO-247 AD (IXTH) Outline
Dim.
Millimeter
Min.
6.4
Inches
Min.
.250
Max.
11.4
3.42
1.09
22.22
11.17
5.71
Max.
.450
.135
.043
.875
.440
.225
A
A1
b
D
e
e1
.97
.038
10.67
5.21
.420
.205
L
p
p1 3.84
q
R
R1
s
16.64
7.93
3.84
.312
.151
.151
1.187 BSC
4.19
4.19
.165
.165
30.15 BSC
13.33
4.77
17.14
.525
.188
.675
.655
TO-204AA (IXTM) Outline
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
Pins
1 - Gate
Case - Drain
2 - Source
1 2 3
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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| IXTH130N10T | 功能描述:MOSFET 130 Amps 100V 8.5 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTH130N15T | 功能描述:MOSFET 130 Amps 150V 12 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTH130N20T | 功能描述:MOSFET 130Amps 200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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