參數(shù)資料
型號： IXTH30N50
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： MegaMOS FET
中文描述： 30 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁數(shù)： 1/2頁
文件大小： 59K
代理商： IXTH30N50
2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°
C to 150
°
C
500
V
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
500
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
30
A
A
120
360
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
°
C
1.13/10 Nm/lb.in.
6
g
TO-247 AD
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
= 5 mA
BV
DSS
temperature coefficient
V
DS
= V
, I
= 250
μ
A
V
GS(th)
temperature coefficient
V
GS
=
±
20 V
DC
, V
DS
= 0
500
V
.087
%/k
V
%/k
nA
V
GS(th)
2
4
-0.25
I
GSS
±
100
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
200
μ
A
mA
3
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
30N50
0.17
Features
z
International standard package
JEDEC TO-247 AD
z
Low R
DS (on)
HDMOS
TM
process
z
Rugged polysilicon gate cell structure
z
Fast switching times
Applications
z
Switch-mode and resonant-mode
power supplies
z
Motor controls
z
Uninterruptible Power Supplies (UPS)
z
DC choppers
Advantages
z
Easy to mount with 1 screw
(TO-247)
(isolated mounting screw hole)
z
Space savings
z
High power density
94569-E (8/02)
D (TAB)
MegaMOS
TM
FET
N-Channel Enhancement Mode
IXTH 30N50
V
DSS
=
500 V
I
D (cont)
=
30 A
R
DS(on)
=
0.17
相關PDF資料
PDF描述
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相關代理商/技術參數(shù)
參數(shù)描述
IXTH30N50L 功能描述:MOSFET 30 Amps 500V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH30N50L2 功能描述:MOSFET 30.0 Amps 500V 0.002 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH30N50P 功能描述:MOSFET 30.0 Amps 500 V 0.2 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH30N60L2 功能描述:MOSFET 30 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH30N60P 功能描述:MOSFET 30.0 Amps 600 V 0.24 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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