參數(shù)資料
型號： IXTH3N120
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： High Voltage Power MOSFETs
中文描述： 3 A, 1200 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： PLASTIC, TO-247, 3 PIN
文件頁數(shù)： 2/4頁
文件大?。?/td> 140K
代理商： IXTH3N120
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH 3N120
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, Note 1
1.5
2.2
S
C
iss
C
oss
C
rss
1050 1300
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
100
125
pF
25
50
pF
t
d(on)
t
r
t
d(off)
t
f
17
ns
V
GS
R
G
= 4.7
(External),
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
15
ns
32
ns
18
ns
Q
g(on)
Q
gs
Q
gd
39
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
9
nC
22
nC
R
thJC
R
thCK
0.8
K/W
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
3
A
I
SM
Repetitive; pulse width limited by T
JM
12
A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
I
F
= I
S
, -di/dt = 100 A/
μ
s, V
R
= 100 V
700
ns
Notes: 1. Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
TO-247 AD Outline
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
1 2 3
相關PDF資料
PDF描述
IXTH40N30 N-Channel Enhancement Mode MegaMOSFET(最大漏源擊穿電壓300V,導通電阻0.085Ω的N溝道增強型MegaMOSFET)
IXTH35N30 MegaMOSTMFET
IXTM40N30 N-Channel Enhancement Mode MegaMOSFET(最大漏源擊穿電壓300V,導通電阻0.088Ω的N溝道增強型MegaMOSFET)
IXTH50P085 Standard Power MOSFET
IXTH50P10 Standard Power MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
IXTH3N150 功能描述:MOSFET High Voltage Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH40N25 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 40A I(D) | TO-218VAR
IXTH40N30 功能描述:MOSFET 40 Amps 300V 0.085 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH40N30 制造商:IXYS Corporation 功能描述:MOSFET N TO-247
IXTH40N50L2 功能描述:MOSFET 40 Amps 500V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*