參數(shù)資料
型號(hào)： IXTH50P10
廠商： IXYS CORP
元件分類(lèi)： 功率晶體管
英文描述： Standard Power MOSFET
中文描述： 50 A, 100 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： PLASTIC, TO-247AD, 3 PIN
文件頁(yè)數(shù)： 2/2頁(yè)
文件大小： 79K
代理商： IXTH50P10
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXTH 50P10
Dim.
Millimeter
Min.
Inches
Min.
Max.
Max.
A
A
1
A
2
b
b
1
b
2
C
D
E
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
.4
.8
.016
.819
.610
.031
.845
.640
20.80
15.75
21.46
16.26
e
L
L1
P
Q
5.20
19.81
5.72
20.32
4.50
0.205 0.225
.780
.800
.177
3.55
5.89
3.65
6.40
.140
0.232 0.252
.144
R
S
4.32
6.15 BSC
5.49
.170
242 BSC
.216
TO-247 AD Outline
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
1 2 3
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= -10 V; I
D
= I
D25
, pulse test
8
16
S
C
iss
C
oss
C
rss
4200
pF
V
GS
= 0 V, V
DS
= -25 V, f = 1 MHz
1720
pF
750
pF
t
d(on)
t
r
t
d(off)
t
f
46
ns
V
GS
= -10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 4.7
(External)
39
ns
86
ns
38
ns
Q
g(on)
Q
gs
Q
gd
150
nC
V
GS
= -10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
36
nC
70
nC
R
thJC
R
thCS
0.42
K/W
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0
-50
A
I
SM
Repetitive; pulse width limited by T
JM
-200
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
-3
V
t
rr
I
F
= I
S
, di/dt = 100 A/
μ
s, V
R
= -50 V
180
ns
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