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參數(shù)資料
| 型號： | JANTX2N2221A |
| 英文描述： | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-18 |
| 中文描述： | 晶體管|晶體管|叩| 40V的五（巴西）總裁| 800mA的一（c）|到18 |
| 文件頁數(shù)： | 2/23頁 |
| 文件大?。?/td> | 135K |
| 代理商： | JANTX2N2221A |
MIL-PRF-19500/545D
10
4.3. Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Measurement
Screen (see table IV
of MIL-PRF-19500
JANS levels
JANTX and JANTXV levels
1a
Not required
1b
Required
Required for JANTXV only
2
Optional
3a
Required
3b
Not applicable
3c
Thermal response (see 4.5.3)
4
Required
Optional
5
Required
Not applicable
7a and 7b
Required
8
Required
Not required
9
ICES1 and hFE2
Not applicable
10
48 hours minimum
11
ICES1 and hFE2; ICES1 = 100 percent of
initial value or100 nA dc, whichever is
greater.
hFE2 = ± 20 percent.
ICES1 and hFE2
12
See 4.3.2
13
Subgroup 2 of table I herein;
ICES1 = 100 percent of initial value or
100 nA dc, whichever is greater.
hFE2 = ± 20 percent.
Subgroup 2 of table I herein;
ICES1 = 100 percent of initial value or
100 nA dc, whichever is greater.
hFE2 = ± 20 percent.
14a and 14b
Optional
15
Required
Not required
16
Required
Not required
4.3.1. Screening (JANHC and JANKC). Screening of JANC die shall be in accordance with MIL-PRF-19500.
Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANTX2N2221AL | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 3PIN TO-18 - Bulk |
| JANTX2N2221AUA | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 4PIN UA - Trays |
| JANTX2N2221AUB | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 50V 0.8A 3-Pin UB 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 3PIN UB - Waffle Pack |
| JANTX2N2222 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| JANTX2N2222A | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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