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參數(shù)資料
| 型號： | JANTX2N2221A |
| 英文描述： | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-18 |
| 中文描述： | 晶體管|晶體管|叩| 40V的五（巴西）總裁| 800mA的一（c）|到18 |
| 文件頁數(shù)： | 7/23頁 |
| 文件大?。?/td> | 135K |
| 代理商： | JANTX2N2221A |
MIL-PRF-19500/545D
15
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 2 - Continued
Forward current transfer
ratio
2N5151 2/
2N5153
3076
VCE = 5 V dc; IC = 50 mA dc,
pulsed (see 4.5.1)
hFE1
20
50
Forward current transfer
ratio
2N5151 2/
2N5153
3076
VCE = 5 V dc; IC = 2.5 A dc,
pulsed (see 4.5.1)
hFE2
30
70
90
200
Forward current transfer
ratio
2N5151 2/
2N5153
3076
VCE = 5 V dc; IC = 5 A dc, pulsed
(see 4.5.1)
hFE3
20
40
Base-emitter voltage (non-
saturated)
3066
Test condition B, VCE = 5 V dc;
IC = 2.5 A dc, pulsed (see 4.5.1)
VBE
1.45
V dc|
Base-emitter saturation
voltage
3066
Test condition A, IC = 2.5 A dc;
IB = 250 mA dc, pulsed (see
4.5.1)
VBE(sat)1
1.45
V dc
Base-emitter saturation
voltage
3066
Test condition A, IC = 5 A dc;
IB = 500 mA dc; pulsed (see
4.5.1)
VBE(sat)2
2.2
V dc
Collector-emitter saturation
voltage
3071
IC = 2.5 A dc; IB = 250 mA dc,
pulsed (see 4.5.1)
VCE(sat)1
0.75
V dc
Collector-emitter saturation
voltage
3071
IC = 5 A dc; IB = 500 mA dc,
pulsed (see 4.5.1)
VCE(sat)2
1.5
V dc
Subgroup 3
High temperature
operation:
TC = +150°C
Collector to emitter cutoff
current
3041
Bias condition A, VCE = 60 V dc;
VBE = +2 V dc
ICEX
500
A dc
See footnote at end of table.
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相關(guān)代理商/技術(shù)參數(shù) |
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| JANTX2N2221AL | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 3PIN TO-18 - Bulk |
| JANTX2N2221AUA | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 4PIN UA - Trays |
| JANTX2N2221AUB | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 50V 0.8A 3-Pin UB 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 3PIN UB - Waffle Pack |
| JANTX2N2222 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| JANTX2N2222A | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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