參數(shù)資料
型號(hào)： JANTXVH2N7394
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-254AA
中文描述： 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 35A條（?。﹟對(duì)254AA
文件頁(yè)數(shù)： 3/21頁(yè)
文件大小： 307K
代理商： JANTXVH2N7394
MIL-PRF-19500/350G
11
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 1 2/
Visual and mechanical 3/
examination
2071
n = 45 devices, c = 0
Solderability 3/ 4/
2026
n = 15 leads, c = 0
Resistance to 3/ 4/ 5/
solvent
1022
n = 15 devices, c = 0
Temperature cycling
3/ 4/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0
Hermetic seal 5/
Fine leak
Gross leak
1071
n = 22 devices, c = 0
Electrical
measurements 4/
Group A, subgroup 2
Bond strength 3/ 4/
2037
Precondition TA = +250
°C at
t = 24 hrs or TA = +300
°C at
t = 2 hrs, n = 11 wires, c = 0.
Decap internal visual
(design verification)
2075
N = 4 devices, c = 0.
Subgroup 2
Collector to base
cutoff current
2N3867, 2N3867S
2N3868, 2N3868S
3036
VCB = 40 V dc
VCB = 60 V dc
I
CBO1
100
A dc
Emitter to base cutoff
current
3061
Bias condition D;
VEB = 4 V dc
I
EBO1
100
A dc
Breakdown voltage,
collector to emitter
2N3867, 2N3867S
2N3868, 2N3868S
3061
Bias condition D; I
C
= 20 mA dc;
pulsed (see 4.5.1)
V
(BR)CEO
40
60
V dc
Collector to emitter
cutoff current
2N3867, 2N3867S
2N3868, 2N3868S
3041
Bias condition A;
V
EB
= 2.0 V dc
VCE = 40 V dc,
VCE = 60 V dc
I
CEX1
1.0
A dc
See footnotes at end of table.
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