參數資料
型號: JANTXVH2N7394
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-254AA
中文描述: 晶體管| MOSFET的| N溝道| 60V的五(巴西)直| 35A條(?。﹟對254AA
文件頁數: 6/21頁
文件大?。?/td> 307K
代理商: JANTXVH2N7394
MIL-PRF-19500/350G
14
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 5 - Continued
Pulse response
3251
Test condition A
Rise time
VCC = -30 V dc, VEB = 0 V dc,
IC = 1.5 A dc, IB1 = 150 mA dc,
See figure 4
tr
65
ns
Storage time
VCC = -30 V dc, VEB = 0 V dc,
IC = 1.5 A dc,
IB1 = IB2 = 150 mA dc,
See figure 5
ts
500
ns
Fall time
VCC = -30 V dc, VEB = 0 V dc,
IC = 1.5 A dc,
IB1 = IB2 = 150 mA dc,
See figure 5
tf
100
ns
Subgroup 6
SOA (continuous dc)
3051
TC = +25°C, 1 cycle,
t = 1.0 s, (see figure 6)
Test 1
VCE = 3.33 V dc, IC = 3 A dc
Test 2
2N3867, 2N3867S
VCE = 40 V dc, IC = 160 mA dc
2N3868, 2N3868S
VCE = 60 V dc, IC = 80 mA dc
Electrical measurements
See table III, steps 1, and 2.
1/ For sampling plan see MIL-PRF-19500.
2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure
in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon
submission.
3/ Separate samples may be used.
4/ Not required for JANS devices.
5/ Not required for laser marked devices.
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