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參數(shù)資料
| 型號： | JANTXVH2N7394 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-254AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 35A條（?。﹟對254AA |
| 文件頁數(shù)： | 4/21頁 |
| 文件大小： | 307K |
| 代理商： | JANTXVH2N7394 |
MIL-PRF-19500/350G
12
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 2 - Continued
Forward-current
transfer ratio
2N3867, 2N3867S
2N3868, 2N3868S
3076
VCE = 1.0 V dc, IC = 500 mA dc,
pulsed (see 4.5.1)
hFE1
50
35
Forward-current
transfer ratio
2N3867, 2N3867 S
2N3868, 2N3868S
3076
VCE = 2.0 V dc, IC = 1.5 A dc,
pulsed (see 4.5.1)
hFE2
40
30
200
150
Forward-current
transfer ratio
2N3867, 2N3867S
2N3868, 2N3868S
3076
VCE = 3.0 V dc, IC = 2.5 A dc,
pulsed (see 4.5.1)
hFE3
25
20
Forward-current
transfer ratio
3076
VCE = 5.0 V dc, IC = 3.0 A dc,
pulsed (see 4.5.1)
hFE4
20
Collector to emitter
voltage (saturated)
3071
I
C
= 500 mA dc; I
B
= 50 mA dc,
pulsed (see 4.5.1)
V
CE(sat)1
0.5
V dc
Collector to emitter
voltage (saturated)
3071
I
C
= 1.5 A dc; I
B
= 150 mA dc;
pulsed (see 4.5.1)
V
CE(sat)2
0.75
V dc
Collector to emitter
voltage (saturated)
3071
I
C
= 2.5 A dc; I
B
= 250 mA dc;
pulsed (see 4.5.1)
V
CE(sat)3
1.5
V dc
Base emitter
voltage (saturated)
3066
Test condition A; I
C
= 500 mA dc;
I
B
= 50 mA dc; pulsed (see 4.5.1)
V
BE(sat)1
1.0
V dc
Base emitter
voltage (saturated)
3066
Test condition A; I
C
= 1.5 A dc;
I
B
= 150 mA dc; pulsed (see 4.5.1)
V
BE(sat)2
0.9
1.4
V dc
Base emitter
voltage (saturated)
3066
Test condition A; I
C
= 2.5 A dc;
I
B
= 250 mA dc;pulsed (see 4.5.1)
V
BE(sat)3
2.0
V dc
See footnotes at end of table.
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