參數(shù)資料
型號: K4C89083AF-AIFB
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: JT 55C 55#22 SKT PLUG
中文描述: 288Mb x18網(wǎng)絡(luò)DRAM2規(guī)范
文件頁數(shù): 41/55頁
文件大?。?/td> 1470K
代理商: K4C89083AF-AIFB
- 41 -
K4C89183AF
0
2
3
4
5
6
7
8
9
10
11
1
12
13
14
15
REV. 0.7 Jan. 2005
Multiple Bank Read-Write Timing (BL=4)
Command
Address
WRA
LAL
LA
UA
Bank
"a"
Bank Add.
RDA
LAL
DESL
WRA
LAL
RDA
LAL
DESL
WRA
LAL
RDA
LAL
LA
UA
LA
UA
LA
UA
UA
UA
LA
LA
Bank
"b"
Bank
"c"
Bank
"d"
l
RBD
=2cycles
Bank
"a"
Bank
"b"
l
RC
(Bank"a")
l
RC
(Bank"a")
Unidirectional DS/Free Running QS mode
l
WRD
=1cycle
l
RWD
=3cycles
l
WRD
=1cycle
l
RWD
=3cycles
l
WRD
=1cycle
WL=3
CL=4
Da0 Da1
Qb0Qb1
Hi-Z
Da2 Da3
Qb2 Qb3
Da0 Da1
Qb0Qb1
Da2 Da3
Qb2 Qb3
Da0 Da1
Qb0Qb1
Hi-Z
Da2 Da3
Qb2Qb3
Da0 Da1
Qb0 Qb1
Da2 Da3
Qb2 Qb3
Da0 Da1
Qb0Qb1
Hi-Z
Da2 Da3
Qb2Qb3
Da0 Da1
Qb0 Qb1
Da2 Da3
WL=4
CL=5
WL=5
CL=6
Note :I
RC
to the same bank must be satisfied.
CLK
CLK
CL =4
(OutQS
(InDS
(OutDQ
CL =5
(OutQS
(InDS
(OutDQ
CL =6
(OutQS
(InDS
(OutDQ
相關(guān)PDF資料
PDF描述
K4C89093AF-AIFB 288Mb x18 Network-DRAM2 Specification
K4C89163AF-AIFB JT 8C 8#16 PIN PLUG
K4C89183AF-AIFB 288Mb x18 Network-DRAM2 Specification
K4C89083AF-GIFB 288Mb x18 Network-DRAM2 Specification
K4C89093AF-GCF5 Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 250V; Case Size: 16x31.5 mm; Packaging: Bulk
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4C89083AF-GCF5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification
K4C89083AF-GCF6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification
K4C89083AF-GCFB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification
K4C89083AF-GIF5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification
K4C89083AF-GIF6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification