參數(shù)資料
型號: K4C89093AF-AIF6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 288Mb x18 Network-DRAM2 Specification
中文描述: 288Mb x18網(wǎng)絡DRAM2規(guī)范
文件頁數(shù): 13/55頁
文件大?。?/td> 1470K
代理商: K4C89093AF-AIF6
K4C89183AF
- 13 -
REV. 0.7 Jan. 2005
AC Test Conditions
Symbol
V
IH
(min)
V
IL
(max)
V
REF
V
TT
V
SWING
V
R
V
ID
(AC)
SLEW
Parameter
Value
V
REF
+ 0.2
V
REF
- 0.2
Units
Notes
Input high voltage (minimum)
V
Input low voltage (maximum)
V
Input reference voltage
VddQ/2
V
Termination voltage
V
REF
V
Input signal peak to peak swing
0.7
V
Differential clock input reference level
V
X(AC)
V
Input differential voltage
1.0
V
Input signal minimum slew rate
2.5
V/ns
V
OTR
Output timing measurement reference voltage
VddQ/2
V
9
V
IH
min
(AC)
V
REF
V
IL
max
(AC)
V
SWING
VddQ
Vss
V
TT
Output
Slew=(V
IH
min
(AC)
- V
IL
max
(AC)
)/
T
T
T
Notes :
1. Transition times are measured between V
IH
min
(DC)
and V
IL
max
(DC)
.
Transition (rise and fall) of input signals have a fixed slope.
2. If the result of nominal calculation with regard to t
CK
contains more than
one decimal place, the result is rounded up to the nearest decimal place.
(i.e., t
DQSS
= 0.8*t
CK
, t
CK
= 3.3ns, 0.8*3.3 ns = 2.64 ns is rounded up to 2.7 ns.)
3. These parameters are measured from the differential clock (CLK and CLK) AC cross point.
4. These parameters are measured from signal transition point of DS crossing V
REF
level.
5. The t
REFI
(MAX.) applies to equally distributed refresh method.
The t
REFI
(MIN.) applies to both burst refresh method and distributed refresh method.
In such case, the average interval of eight consecutive Auto-Refresh commands has to be more than 400ns always. In
other words, the number of Auto- Refresh cycles which can be performed within 3.2us (8X400ns) is to 8 times in the
maximum.
6. Low Impedance State is speified at VddQ/2± 0.2V from steady state.
7. High Impedance State is specified where output buffer is no longer driven.
8. These parameters depend on the clock jitter. These parameters are measured at stable clock.
9. Output timing is measured by using Normal driver strength at V
DDQ
= 1.7V ~ 1.9V.
Output timing is measured by using Strong driver strength at V
DDQ
= 1.4V ~ 1.6V
AC Test Load
25
Measurement Point
相關PDF資料
PDF描述
K4C89163AF-AIF6 288Mb x18 Network-DRAM2 Specification
K4C89183AF-AIF6 JT 55C 55#22M PIN PLUG
K4C89083AF-AIFB JT 55C 55#22 SKT PLUG
K4C89093AF-AIFB 288Mb x18 Network-DRAM2 Specification
K4C89163AF-AIFB JT 8C 8#16 PIN PLUG
相關代理商/技術參數(shù)
參數(shù)描述
K4C89093AF-AIFB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification
K4C89093AF-GCF5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification
K4C89093AF-GCF6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification
K4C89093AF-GCFB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification
K4C89093AF-GIF5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:288Mb x18 Network-DRAM2 Specification