參數(shù)資料
型號: K4C89093AF-AIF6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 288Mb x18 Network-DRAM2 Specification
中文描述: 288Mb x18網(wǎng)絡DRAM2規(guī)范
文件頁數(shù): 43/55頁
文件大小: 1470K
代理商: K4C89093AF-AIF6
K4C89183AF
- 43 -
REV. 0.7 Jan. 2005
Power Down Timing (CL=4, BL=4)
Read cycle to Power Down Mode
Command
RDA
LAL
or
WRA
BL=2, SEQUENTIAL MODE
Address
UA
UA
DESL
LA
Unidirectional DS/Free Running QS mode
Unidirectional DS/QS mode
PD
t
IH
t
QPDH
t
PDEX
t
IS
I
PD
=2 cycle
I
RC(min),
t
REFI(max)
Q0 Q1
Low
Hi-Z
(Output)
QS
DQ
(input)
DS
(Output)
CL=4
Q2 Q3
Q0 Q1
Hi-Z
(Output)
QS
DC
(input)
DS
(Output)
CL=4
Q2 Q3
Hi-Z
Hi-Z
PD must be kept "High" level until end of Burst data output.
PD should be brought to "High" within t
REFI
(max.) to maintain the data written into cell.
In Power Down Mode, PD "Low" and a stable clock signal must be maintained.
When PD is brought to "High", a valid executable command may be applied I
PDA
cycles later.
Note :
Power Down Entry
Power Down Exit
0
2
3
4
5
6
7
8
9
10
n-1
1
n
n+1
n+2
n+3
CLK
CLK
DESL
I
PDA
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