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    參數(shù)資料
    型號(hào): K4C89163AF-GCF6
    廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
    英文描述: 288Mb x18 Network-DRAM2 Specification
    中文描述: 288Mb x18網(wǎng)絡(luò)DRAM2規(guī)范
    文件頁(yè)數(shù): 14/55頁(yè)
    文件大?。?/td> 1470K
    代理商: K4C89163AF-GCF6
    K4C89183AF
    - 14 -
    REV. 0.7 Jan. 2005
    Power Up Sequence
    1. As for PD, being maintained by the low state (<0.2V) is desirable before a power-supply injection.
    2. Apply V
    DD
    before or at the same time as V
    DDQ
    .
    3. Apply V
    DDQ
    before or at the same time as V
    REF
    .
    4. Start clock (CLK, CLK) and maintain stable condition for 200us (min.).
    5. After stable power and clock, apply DESL and take PD = H.
    6. Issue EMRS to enable DLL and to define driver strength and data strobe type. (Note : 1)
    7. Issue MRS for set CAS Latency (CL), Burst Type (BT), and Burst Length (BL). (Note : 1)
    8. Issue two or more Auto-Refresh commands. (Note:1)
    9. Ready for normal operation after 200 clocks from Extended Mode Register programming.
    Note :
    1. Sequence 6, 7 and 8 can be issued in random order.
    2. L=Logic Low, H = Logic High
    DESL
    RDA MRS
    DESL
    RDA MRS
    DESL
    WRA REF
    WRA REF
    DESL
    DESL
    EMRS
    MRS
    op-code
    op-code
    V
    DD
    V
    DDQ
    V
    REF
    CLK
    CLK
    PD
    Command
    Address
    DQ
    DS
    200
    μ
    s(min)
    I
    PDA
    l
    RSC
    l
    RSC
    l
    REFC
    2.5V(TYP)
    1.8V(TYP)
    0.9V(TYP)
    l
    REFC
    t
    PDEX
    200 clock cycle(min)
    QS
    EMRS
    Hi-Z
    (Free RuQS
    (Uni-QS mode)
    MRS
    Auto Refresh cycle
    Normal Operation
    Low
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