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參數(shù)資料
| 型號(hào)： | K4D623238B-GC |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Mbit DDR SDRAM |
| 中文描述： | 64Mb的DDR SDRAM內(nèi)存 |
| 文件頁數(shù)： | 11/17頁 |
| 文件大小： | 147K |
| 代理商： | K4D623238B-GC |
64M DDR SDRAM
K4D623238B-GC
- 11 -
Rev. 1.4 (Sep. 2002)
DC CHARACTERISTICS
Recommended operating conditions Unless Otherwise Noted, T
A
=0 to 65
°
C)
Note :
1. Measured with outputs open.
2. Refresh period is 16ms.
3. K4D623238B-GC*
4. K4D623238B-GL*
Parameter
Symbol
Test Condition
Version
Unit
Note
-33
-40
-45
-50
-55
-60
Operating Current
(One Bank Active)
I
CC1
Burst Lenth=2
t
RC
≥
t
RC
(min)
I
OL
=0mA,
t
CC
=
t
CC
(min)
470
340
315
290
275
260
mA
1
Precharge Standby Current
in Power-down mode
I
CC2
P
CKE
≤
V
IL
(max),
t
CC
=
t
CC
(min)
75
65
65
65
65
65
mA
Precharge Standby Current
in Non Power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min),
t
CC
=
t
CC
(min)
155
125
120
115
110
105
mA
Active Standby Current
power-down mode
I
CC3
P
CKE
≤
V
IL
(max),
t
CC
=
t
CC
(min)
150
130
130
130
130
130
mA
Active Standby Current in
in Non Power-down mode
I
CC3
N
CKE
≥
VIH(min), CS
≥
VIH(min),
t
CC
=
t
CC
(min)
270
220
210
200
190
180
mA
Operating Current
( Burst Mode)
I
CC4
I
OL
=0mA ,
t
CC
=
t
CC
(min),
Page Burst, All Banks activated.
900
700
650
600
550
520
mA
Refresh Current
I
CC5
t
RC
≥
t
RFC
(min)
405
340
330
320
310
300
mA
2
Self Refresh Current
I
CC6
CKE
≤
0.2V
4.5
4
mA
3
1
mA
4
Operating Current
( 4Bank Interleaving)
I
CC7
Burst Lenth=4
t
RC
≥
t
RC
(min)
I
OL
=0mA,
t
CC
=
t
CC
(min)
1050
850
800
750
700
670
mA
1. V
ID
is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of the same
Note :
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to V
SS
=0V, V
DD
/ V
DDQ
=2.5V+
5%, T
A
=0 to 65
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Input High (Logic 1) Voltage; DQ
V
IH
V
REF
+0.35
-
-
V
Input Low (Logic 0) Voltage; DQ
V
IL
-
-
V
REF
-0.35
V
Clock Input Differential Voltage; CK and CK
V
ID
0.7
-
V
DDQ
+0.6
V
1
Clock Input Crossing Point Voltage; CK and CK
V
IX
0.5*V
DDQ
-0.2
-
0.5*V
DDQ
+0.2
V
2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4D623238B-GC/L33 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit DDR SDRAM |
| K4D623238B-GC/L40 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit DDR SDRAM |
| K4D623238B-GC/L45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit DDR SDRAM |
| K4D623238B-GC/L50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit DDR SDRAM |
| K4D623238B-GC/L55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit DDR SDRAM |
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